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参数资料
| 型号： | 2N4856A |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | 小信号晶体管 |
| 英文描述： | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-206AA |
| 封装： | HERMETIC SEALED, TO-18, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 51K |
| 代理商： | 2N4856A |
2N4856A/4857A/4858A
Vishay Siliconix
www.vishay.com
7-2
Document Number: 70243
S-04028—Rev. D, 04-Jun-01
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage : (2N4856A-58A)
–40 V
. . . . . . . . . . . . . . .
Gate Current
50 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 seconds)
300
_C
. . . . . . . . . . . . . .
Storage Temperature
–65 to 200
_C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature
–55 to 200
_C
. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipationa
1.8 W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a.
Derate 10 mW/
_C for TC > 25_C
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N4856A
2N4857A
2N4858A
Parameter
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V(BR)GSS
IG = –1 mA , VDS = 0 V
–55
–40
V
Gate-Source Cutoff Voltage
VGS(off)
VDS = 15 V, ID = 0.5 nA
–4
–10
–2
–6
–0.8
–4
V
Saturation Drain Currentb
IDSS
VDS = 15 V, VGS = 0 V
50
20
100
8
80
mA
VGS = –20 V, VDS = 0 V
–5
–250
pA
Gate Reverse Current
IGSS
TA = 150_C
–13
–500
nA
Gate Operating Currentc
IG
VDG = 15 V, ID = 10 mA
–5
VDS = 15 V, VGS = –10 V
5
250
pA
Drain Cutoff Current
ID(off)
TA = 150_C
13
500
nA
ID = 5 mA
0.25
0.5
Drain-Source On-Voltage
VDS(on)
VGS = 0 V
ID = 10 mA
0.35
0.5
V
ID = 20 mA
0.5
0.75
Drain-Source On-Resistancec
rDS(on)
VGS = 0 V, ID = 1 mA
25
40
60
W
Gate-Source Forward Voltagec
VGS(F)
IG = 1 mA , VDS = 0 V
0.7
V
Dynamic
Common-Source
Forward Transconductancec
gfs
VDS = 20 V, ID = 1 mA
6
mS
Common-Source
Output Conductancec
gos
VDS = 20 V, ID = 1 mA
f = 1 kHz
25
mS
Drain-Source On-Resistance
rds(on)
VGS = 0 V, ID = 0 mA
f = 1 kHz
25
40
60
W
Common-Source
Input Capacitance
Ciss
VDS = 0 V, VGS = –10 V
7
10
Common-Source
Reverse Transfer Capacitance
Crss
VDS = 0 V, VGS = –10 V
f = 1 MHz
3
4
3.5
pF
Equivalent Input
Noise Voltagec
en
VDS = 10 V, ID = 10 mA
f = 1 kHz
3
nV
√Hz
Switching
td(on)
2
5
6
8
Turn-On Time
tr
VDD = 10 V, VGSH = 0 V
See Switching Circuit
2
3
4
8
ns
Turn-Off Time
tOFF
See Switching Circuit
12
20
40
80
Notes
a.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
NCB
b.
Pulse test: PW
v100 ms duty cycle v10%.
c.
This parameter not registered with JEDEC.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N4856A-E3 | 功能描述:JFET 40V 5pA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N4856JAN | 制造商:Harris Corporation 功能描述: |
| 2N4856JAN01 | 制造商:Vishay Intertechnologies 功能描述:Trans JFET N-CH 3-Pin TO-206AA |
| 2N4856JAN02 | 制造商:Vishay Siliconix 功能描述:TRANS JFET N-CH 3PIN TO-206AA - Bulk 制造商:Vishay Siliconix 功能描述:MOSFET N-CH 40V 50MA TO-18 |
| 2N4856JANTX | 制造商: 功能描述: 制造商:undefined 功能描述: 制造商:Vishay Intertechnologies 功能描述:N CHANNEL JFET, -40V, TO-206AA, Transistor Type:JFET, Breakdown Voltage Vbr:-40V 制造商:Vishay Siliconix 功能描述:N CHANNEL JFET, -40V, TO-206AA, Transistor Type:JFET, Breakdown Voltage Vbr:-40V, Zero Gate Voltage Drain Current Idss Min:50mA, Zero Gate Voltage Drain Current Idss Max:50mA, Gate-Source Cutoff Voltage Vgs(off) Max:-10V , RoHS Compliant: No |
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