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参数资料
| 型号： | 2N4858 |
| 厂商： | MICROSEMI CORP-LAWRENCE |
| 元件分类： | 小信号晶体管 |
| 英文描述： | N-CHANNEL J-FET |
| 中文描述： | 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-206AA |
| 封装： | TO-18, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 36K |
| 代理商： | 2N4858 |
2N4856JAN/JANTX/JANTXV Series
Vishay Siliconix
www.vishay.com
7-2
Document Number: 70244
S-04028
—
Rev. C, 04-Jun-01
Gate-Drain, Gate-Source Voltage :
(2N4856-58)
(2N4859-61)
–
40 V
–
30 V
50 mA
300 C
. . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . .
Gate Current
Lead Temperature (
1
/
16
”
from case for 10 seconds)
Storage Temperature
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . .
–
65 to 200 C
Operating Junction Temperature
Power Dissipation
a
–
65 to 200 C
1800 mW
. . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a.
Derate 10.3 mW/ C to T
C
> 25 C
Limits
2N4856
2N4857
2N4858
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V
(BR)GSS
I
G
=
–
1 A , V
DS
= 0 V
–
55
–
40
–
40
–
40
V
Gate-Source Cutoff Voltage
V
GS(off)
V
DS
= 15 V, I
D
= 0.5 nA
–
4
–
10
–
2
–
6
–
0.8
–
4
Saturation Drain Current
b
I
DSS
V
DS
= 15 V, V
GS
= 0 V
50
175
20
100
8
80
mA
V
GS
=
–
20 V, V
DS
= 0 V
–
5
–
250
–
250
–
250
pA
Gate Reverse Current
I
GSS
T
A
= 150 C
–
13
–
500
–
500
–
500
nA
Gate Operating Current
c
I
G
V
DG
= 15 V, I
D
= 10 mA
–
5
V
DS
= 15 V, V
GS
=
–
10 V
5
250
250
250
pA
Drain Cutoff Current
I
D(off)
T
A
= 150 C
13
500
500
500
nA
I
D
= 5 mA
0.25
0.5
Drain-Source On-Voltage
V
DS(on)
V
GS
= 0 V
I
D
= 10 mA
0.35
0.5
V
I
D
= 20 mA
0.5
0.75
Drain-Source On-Resistance
c
r
DS(on)
V
GS
= 0 V, I
D
= 1 mA
25
40
60
Gate-Source
Forward Voltage
c
V
GS(F)
I
G
= 1 mA , V
DS
= 0 V
0.7
V
Dynamic
Common-Source
Forward Transconductance
c
g
fs
V
DG
= 20 V, I
= 1 mA
f = 1 kHz
6
mS
Common-Source
Output Conductance
c
g
os
25
S
Common-Source
Input Capacitance
C
iss
V
DS
= 0 V, V
=
–
10 V
f = 1 MHz
7
18
18
18
Common-Source
Reverse Transfer Capacitance
C
rss
3
8
8
8
pF
Equivalent Input
Noise Voltage
c
e
n
V
DG
= 10 V, I
= 10 mA
f = 1 kHz
3
nV
√
Hz
Switching
t
d(on)
2
6
6
10
Turn-On Time
t
r
V
DD
= 10 V, V
= 0 V
See Switching Circuit
2
3
4
10
ns
Turn-Off Time
t
OFF
13
25
50
100
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N4858 WAF | 制造商:ON Semiconductor 功能描述: |
| 2N4858A | 功能描述:JFET Leaded JFET General Purpose RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N4858A-E3 | 功能描述:JFET 40V 5pA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N4858A-E3 | 制造商:Vishay Siliconix 功能描述:TRANSISTORS - JFET |
| 2N4858JAN | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel JFETs |
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