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参数资料
| 型号： | 2N4906 |
| 厂商： | SEMELAB LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 5 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 封装： | HERMETIC SEALED, METAL, TO-3, 2 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 182K |
| 代理商： | 2N4906 |
SILICON EPITAXIAL
PNP TRANSISTOR
2N4906
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 8299
Issue 1
Page 2 of 3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
Min.
Typ
Max.
Units
V(BR)CEO
(1)
Collector-Emitter
Breakdown Voltage
IC = -10mA
-80
V
VCE = -80V
VBE = 1.5V
-0.1
ICEV
Collector Cut-Off Current
TC = 150°C
-2
ICEO
Collector Cut-Off Current
VCE = -80V
IB = 0
-1.0
ICBO
Collector Cut-Off Current
VCB = -80V
IE = 0
-0.1
IEBO
Emitter Cut-Off Current
VEB = -5V
IC = 0
-1.0
mA
IC = -2.5A
VCE = -2V
25
100
hFE
(1)
Forward-current transfer
ratio
IC = -5A
VCE = -2V
7
VBE(on)
(1)
Base-Emitter Voltage
IC = -2.5A
VCE = -2V
-1.4
IC = -2.5A
IB = -0.25A
-1.0
VCE(sat)
(1)
Collector-Emitter Saturation
Voltage
IC = -5A
IB = -1.0A
-1.5
V
DYNAMIC CHARACTERISTICS
IC = -500mA
VCE = -10V
hfe
Small-Signal Current Gain
f = 1.0KHz
40
IC = -1.0A
VCE = -10V
fT
Transition Frequency
f = 1.0MHz
4
MHz
Notes
(1)
Pulse Width ≤ 300us, δ ≤ 2%
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| 2N4906 | 5 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3 |
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