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参数资料
| 型号： | 2N4911 |
| 厂商： | MICROSEMI CORP-LAWRENCE |
| 元件分类： | 功率晶体管 |
| 英文描述： | 1 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 封装： | TO-66, 2 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 136K |
| 代理商： | 2N4911 |
NPN POWER SILICON TRANSISTOR
2N4911
ON CHARACTERISTICS
DC Current Gain
IC = 50 Adc, VCE = 1.0 Vdc
IC = .5 Adc, VCE = 1.0 Vdc
hFE
40
20
100
Vdc
Collector-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 100 mAdc
VCE(sat)
0.6
Vdc
Base-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 100 mAdc
VBE(sat)
1.3
Vdc
DYNAMIC CHARACTERISTICS
CHARACTERISTICS
Symbol
Min
Max
Unit
Forward Current Transfer Ratio
IC = .25 Adc, VCE = 10 Vdc, f = 1.0 kHz
hfe
25
MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, f = 100 kHz
Cob
100
pF
(1) Pulse Test: Pulse Width = 300s, Duty Cycle ≤ 2.0%
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
102303
Page 2 of 2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N4911X | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE |
| 2N4911XSMD | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed |
| 2N4911XSMD05 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | SMT |
| 2N4912 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 80V 4A 2PIN TO-66 - Bulk 制造商:NTE Electronics 功能描述:T-NPN SI- AF PO |
| 2N4912X | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE |
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