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参数资料
| 型号： | 2N4915 |
| 厂商： | SEMELAB LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封装： | HERMETIC SEALED, METAL, TO-3, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 182K |
| 代理商： | 2N4915 |
SILICON EPITAXIAL
NPN TRANSISTOR
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 8302
Issue 1
Page 1 of 3
2N4915
Low Collector Saturation Voltage.
Hermetic TO3 Metal Package.
Designed For General Purpose, Switching
and Power Amplifier Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (T
C = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
80V
VCEO
Collector – Emitter Voltage
80V
VEBO
Emitter – Base Voltage
5V
IC
Continuous Collector Current
5A
IB
Base Current
1.0A
PD
Total Power Dissipation at
TC = 25°C
87.5W
Derate Above 25°C
0.5W/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols
Parameters
Min.
Typ.
Max.
Units
RθJC
Thermal Resistance, Junction To Case
2
°C/W
相关PDF资料 |
PDF描述 |
|---|---|
| 2N4915R1 | 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 2N4915 | 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N4914 | 5 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N4915 | 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N1722 | 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-53 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N4916 | 制造商: 功能描述: 制造商:K ELECTRONICS INC. 功能描述: 制造商:K-ELEC 功能描述: 制造商:undefined 功能描述: 制造商:Solid State Devices Inc (SSDI) 功能描述:SILICON TRANSISTOR 制造商:ETC 功能描述:Bipolar Junction Transistor, PNP Type, TO-106VAR |
| 2N4917 | 制造商:n/a 功能描述:2N4917 ASI GOLD LDS N7D4B 制造商:ELCIND 功能描述: |
| 2N4918 | 功能描述:两极晶体管 - BJT PNP Power RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4918 LEDFREE | 功能描述:两极晶体管 - BJT PNP Power RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4918/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Medium-Power Plastic PNP Silicon Transistors |
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