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参数资料
| 型号： | 2N491B |
| 厂商： | AMERICAN MICROSEMICONDUCTOR INC |
| 元件分类： | 单结晶体管 |
| 英文描述： | UJT, TO-5 |
| 封装： | TO-5, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 263K |
| 代理商： | 2N491B |
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2N491B Information
Category Thyristors
Class Unijunction Transistors
Type PN (N-Type Base)
2N491B Specifications
Military/High-Rel : N
Absolute Max. Power Diss. (W) : 450m
Intrinsic Standoff Ratio (Min) : 0.56
Intrinsic Standoff Ratio (Max) : 0.68
I(P) Max. (A) : 6.0u
I(V) Min. (A) : 8.0m
r(BBO) Min. (к) : 4.7k
r(BBO) Max. (к) : 6.8k
V(B2B1) Max. (V) : 65
I(E) Max. (A) : 70m
Minimum Operating Temp (шC) : -65
Maximum Operating Temp (шC) : 140
Package Style : TO-5
Mounting Style : T
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2N491B Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio...
http://www.americanmicrosemi.com/information/spec/?ss_pn=2N491B
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11/7/2009 2:10 AM
相关PDF资料 |
PDF描述 |
|---|---|
| 2N491 | UJT, TO-5 |
| 2N491 | UJT, TO-5 |
| 2N492 | UJT, TO-5 |
| 2N4852 | UJT, TO-78 |
| 2N4920 | 1 A, 80 V, PNP, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N492 | 制造商:TI 功能描述:2N492 |
| 2N4920 | 功能描述:两极晶体管 - BJT PNP Med Power RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4920 | 制造商:ON Semiconductor 功能描述:TRANSISTOR PNP TO-126 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR PNP -80V |
| 2N4920G | 功能描述:两极晶体管 - BJT 3A 80V 30W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4921 | 功能描述:两极晶体管 - BJT 3A 40V 30W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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