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参数资料
| 型号： | 2N4953D26Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件页数： | 2/7页 |
| 文件大小： | 294K |
| 代理商： | 2N4953D26Z |
2N4953
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC =10 mA, IB = 0
30
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10
A, I
E = 0
60
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10
A, I
C = 0
5.0
V
ICBO
Collector Cutoff Current
VCB = 40 V, IE = 0
50
nA
IEBO
Emitter Cutoff Current
VEB = 3.0 V, IC = 0
50
nA
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE = 10 V, IC = 1.0 mA
VCE = 10 V, IC = 10 mA
VCE = 10 V, IC = 150 mA
75
150
200
600
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA
0.3
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA
1.3
V
VBE(on)
Base-Emitter On Voltage
VCE = 10 V, IC = 150 mA
1.2
V
SMALL SIGNAL CHARACTERISTICS
Cob
Output Capacitance
VCB = 10 V, f = 1.0 MHz
8.0
pF
hfe
Small-Signal Current Gain
IC = 20 mA, VCE = 10 V,
f = 100 MHz
2.5
ton
Turn-On Time
VCC = 30 V, IC = 150 mA,
40
ns
toff
Turn-Off Time
IB1 = IB2 = 15 mA
400
ns
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N4954 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 500MA I(C) | TO-98 |
| 2N4956 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS |
| 2N4957 | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Bulk |
| 2N4957_02 | 制造商:SEMICOA 制造商全称:SEMICOA 功能描述:Silicon PNP Transistor |
| 2N4957JAN | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT PNP 30V 0.03A 4-Pin TO-72 |
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