参数资料
型号: 2N5004JX
厂商: SEMICOA CORP
元件分类: 功率晶体管
英文描述: 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-59
封装: HERMETIC SEALED, METAL CAN-3
文件页数: 1/2页
文件大小: 379K
代理商: 2N5004JX
Rev. C
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N5004
Silicon NPN Transistor
Data Sheet
Description
Complement to the 2N5005
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500 Appendix E
JAN level (2N5004J)
JANTX level (2N5004JX), or
JANTXV level (2N5004JV)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
High-speed power-switching
Power Transistor
NPN silicon transistor
Features
Hermetically sealed TO-59 metal can
Also available in chip configuration
Chip geometry 9202
Reference document:
MIL-PRF-19500/534
Benefits
Qualification Levels: JAN, JANTX, and
JANTXV
Radiation testing available
Absolute Maximum Ratings
TC = 25°C unless otherwise specified
Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
80
Volts
Collector-Base Voltage
VCBO
100
Volts
Emitter-Base Voltage
VEBO
5.5
Volts
Collector Current, Continuous
IC
5
A
Power Dissipation, TA = 25°C
Derate linearly above 25
°C
PT
2
11.4
W
mW/
°C
Power Dissipation, TC = 25°C
Derate linearly above 25
°C
PT
58
331
W
mW/
°C
Thermal Resistance
RθJA
RθJC
88
3
°C/W
Operating Junction Temperature
TJ
-65 to +200
°C
Storage Temperature
TSTG
-65 to +200
°C
Semicoa Corporation
Copyright
2010
相关PDF资料
PDF描述
2N5004 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-59
2N5005 5 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-59
2N5009 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-61
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