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参数资料
| 型号： | 2N5010R1 |
| 厂商： | SEMELAB LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 0.5 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-205AD |
| 封装： | HERMETIC SEALED, METAL, TO-39, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 13K |
| 代理商： | 2N5010R1 |
Document Number 3696
Issue 1
2N5010
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
SILICON EPITAXIAL
NPN TRANSISTOR
FEATURES
General purpose power transistor for
switching and linear applications in a
hermetic TO–39 package.
VCBO
Collector – Base Voltage
VCER
Collector – Emitter Voltage
R = 10
VEBO
Emitter – Base Reverse Voltage
IC
Continuous Collector Current
PTOT
Total Device Dissipation
TC = 25°C
TJ,TSTG
Maximum Storage and Junction Temperature Range
RθJC
Thermal Impedance Junction To Case
500V
5V
0.5A
2W
200°C
50°C/W
MECHANICAL DATA
Dimensions in mm (inches)
TO–39 (TO-205AD) PACKAGE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
PIN 1 – Emitter
PIN 2 – Base
PIN 3 – Collector
0.89
(0.035)
max.
12.70
(0.500)
min.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
45°
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
1
2
3
0.74 (0.029)
1.14 (0.045)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
ICBO
Collector Base Leakage Current
hFE
D.C Current Gain
ft
Transition Frequency
VCB = 500V
VCE = 10V
IC =0.025A
0.006
30
180
20
mA
—
MHz
相关PDF资料 |
PDF描述 |
|---|---|
| 2N5010.MOD | 0.5 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-205AD |
| 2N5015R1 | 0.5 A, 1000 V, NPN, Si, POWER TRANSISTOR, TO-205AD |
| 2N5015S.MOD | 0.5 A, 1000 V, NPN, Si, POWER TRANSISTOR, TO-205AD |
| 2N5015S | 0.5 A, 1000 V, NPN, Si, POWER TRANSISTOR, TO-205AD |
| 2N5015 | NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5010S | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:NPN SILICON TRANSISTOR |
| 2N5011 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 0.5A 3PIN TO-5 - Bulk |
| 2N5011S | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:NPN SILICON TRANSISTOR |
| 2N5012 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 0.5A 3PIN TO-5 - Bulk |
| 2N5012S | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:NPN SILICON TRANSISTOR |
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