参数资料
型号: 2N5011
厂商: MICROSEMI CORP-LAWRENCE
元件分类: 小信号晶体管
英文描述: 200 mA, 600 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5
封装: TO-5, 3 PIN
文件页数: 1/4页
文件大小: 54K
代理商: 2N5011
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/727
T4-LDS-0067 Rev. 2 (100293)
Page 1 of 4
DEVICES
LEVELS
2N5010
2N5013
2N5010S
2N5013S
JAN
2N5011
2N5014
2N5011S
2N5014S
JANTX
2N5012
2N5015
2N5012S
2N5015S
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Collector-Emitter Voltage
2N5010
500
Vdc
2N5011
600
Vdc
2N5012
700
Vdc
2N5013
800
Vdc
2N5014
900
Vdc
2N5015
VCER
1000
Vdc
Collector-Base Voltage
2N5010
500
Vdc
2N5011
600
Vdc
2N5012
700
Vdc
2N5013
800
Vdc
2N5014
900
Vdc
2N5015
VCBO
1000
Vdc
Emitter-Base Voltage
VEBO
5
Vdc
Collector Current
IC
200
mAdc
Base Current
IB
20
mAdc
Total Power Dissipation
@ TA = +25°C
@ TC = +25° C
Pt
1.0
7.0
W
Thermal Resistance, Junction to Case
1/
RθJC
20
°C/W
Operating & Storage Junction Temperature Range
Tj, Tstg
-65 to +200
°C
Note:
1/ See 19500/727 for Thermal Derating Curves.
TO-5
2N5010 thru 2N5015
TO-39
2N5010S thru 2N5015S
相关PDF资料
PDF描述
2N5014S 200 mA, 900 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
2N5012 Si, SMALL SIGNAL TRANSISTOR, TO-39
2N1717 Si, SMALL SIGNAL TRANSISTOR, TO-39
2N1714 0.75 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-39
2N5013R1 0.5 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-205AD
相关代理商/技术参数
参数描述
2N5011S 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:NPN SILICON TRANSISTOR
2N5012 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 0.5A 3PIN TO-5 - Bulk
2N5012S 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:NPN SILICON TRANSISTOR
2N5013 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 0.5A 3PIN TO-5 - Bulk
2N5013S 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:NPN SILICON TRANSISTOR