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参数资料
| 型号： | 2N5013 |
| 厂商： | SOLID STATE DEVICES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 封装： | TO-5, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 74K |
| 代理商： | 2N5013 |
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
FEATURES:
BVCER to 1000 volts
Low Saturation Voltage
Low Leakage at High Temperature
High Gain, Low Saturation
200° C Operating, Gold Eutectic Die Attach
2N5010 thru 2N5012 Also Available, Contact Factory
TX, TXV, and S-Level Screening Available
2N5013 thru 2N5015
0.5 AMP
800 – 1000 Volts
NPN Transistor
Maximum Ratings
Symbol
Value
Units
Collector – Emitter Voltage (R
BE= 1 kΩ)
2N5013
2N5014
2N5015
VCER
800
900
1000
V
Collector – Base Voltage
2N5013
2N5014
2N5015
VCBO
800
900
1000
V
Emitter – Base Voltage
VEBO
5
V
Collector – Emitter Breakdown Voltage
2N5013
2N5014
2N5015
BVCEO
300
400
500
V
Peak Collector Current
IC
0.5
A
Peak Base Current
IB
250
mA
Total Device Dissipation @ T
C = 100 C
Derate above 100 C
PD
2.0
20
W
mW/C
Operating and Storage Temperature
TOP, TSTG
-65 to +200
C
Thermal Resistance, Junction to Case
RθJC
50
C/W
CASE OUTLINE: TO-39
PIN 1: EMITTER
PIN 2: BASE
PIN 3: COLLECTOR
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0043B
DOC
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5013S | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:NPN SILICON TRANSISTOR |
| 2N5014 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 0.5A 3PIN TO-5 - Bulk |
| 2N5014_01 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:SILICON EPITAXIAL NPN TRANSISTOR |
| 2N5014S | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:NPN SILICON TRANSISTOR |
| 2N5015 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 0.2A 3-Pin TO-5 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 0.5A 3PIN TO-5 - Bulk |
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