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参数资料
| 型号： | 2N5014 |
| 厂商： | SOLID STATE DEVICES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 封装： | TO-5, 3 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 74K |
| 代理商： | 2N5014 |
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
2N5013 thru 2N5015
NOTES:
1/
Unless Otherwise Specified: All Tests @ 25C
2/
Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%
For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.
Electrical Characteristic
1/
Symbol
Min
Max
Units
Collector – Emitter Breakdown Voltage
(IC = 200 μADC, RBE = 1 KΩ)
2N5013
2N5014
2N5015
BVCER
800
900
1000
––
V
Collector–Base Breakdown Voltage
(IC = 200 ADC)
2N5013
2N5014
2N5015
BVCBO
800
900
1000
––
V
Emitter–Base Breakdown Voltage
(IE = 50 ADC)
BVEBO
5
––
V
Collector Cutoff Current
(VCB = 650 V)
(VCB = 700 V)
(VCB = 760 V)
(VCB = 650 V, TC = 100°C)
(VCB = 700 V, TC = 100°C)
(VCB = 760 V, TC = 100°C)
2N5013
2N5014
2N5015
2N5013
2N5014
2N5015
ICBO
––
12
100
Adc
Emitter Cutoff Current
(VEB= 4V)
IEBO
—
20
A
DC Current Gain 2/
(IC = 5 mADC, VCE = 10 VDC)
(IC = 20 mADC, VCE = 10 VDC)
hFE
10
30
180
––
Collector – Emitter Saturation Voltage 2/
(IC = 20 mADC, IB = 5 mADC)
2N5013
2N5014
2N5015
VCE(Sat)
––
1.6
1.8
Vdc
Base – Emitter Saturation Voltage 2/
(IC = 20 mADC, IB = 5 mADC)
VBE(Sat)
––
1.0
Vdc
Current Gain Bandwidth Product
(IC = 20 mADC, VCE = 10 VDC, f = 1 – 20 MHz)
fT
20
––
MHz
Output Capacitance
(VCB = 10 VDC, IE = 0 ADC, f = 1.0 MHz)
Cob
––
30
pF
Delay Time
Rise Time
Storage Time
Fall Time
VCC= 125 VDC,
IC= 100 mADC,
IB1= 20 mADC,
IB2= 20 mADC
td
tr
ts
tf
––
200
1200
3.0
800
nsec
sec
nsec
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5014_01 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:SILICON EPITAXIAL NPN TRANSISTOR |
| 2N5014S | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:NPN SILICON TRANSISTOR |
| 2N5015 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 0.2A 3-Pin TO-5 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 0.5A 3PIN TO-5 - Bulk |
| 2N5015_08 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:HIGH VOLTAGE SILICON EPITAXIAL NPN TRANSISTOR |
| 2N5015_1 | 制造商:SSDI 制造商全称:Solid States Devices, Inc 功能描述:0.5 AMP, 1000 Volts NPN Transistor |
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