- 您现在的位置：买卖IC网 > PDF目录30437 > 2N501539TX (SOLID STATE DEVICES INC) 500 mA, 1000 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 PDF资料下载
参数资料
| 型号： | 2N501539TX |
| 厂商： | SOLID STATE DEVICES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 1000 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 封装： | TO-39, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 125K |
| 代理商： | 2N501539TX |
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0043D
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
2N50
__
SFT50
__
│
└
Screening
2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
└
Package
/39 = TO-39
/5 = TO-5
└
Family / Voltage
13 = 800V
14 = 900V
15 = 1000V
2N5013 thru 2N5015
SFT5013/5 thru SFT5015/5
0.5 AMP
NPN Transistor
800 – 1000 Volts
FEATURES:
BVCER to 1000 volts
Low Saturation Voltage
Low Leakage at High Temperature
High Gain, Low Saturation
200° C Operating, Gold Eutectic Die Attach
2N5010 thru 2N5012 Also Available, Contact Factory
TX, TXV, and S-Level Screening Available
Maximum Ratings
Symbol
Value
Units
Collector – Emitter Voltage (RBE= 1 k)
5013
5014
5015
VCER
800
900
1000
V
Collector – Base Voltage
5013
5014
5015
VCBO
800
900
1000
V
Emitter – Base Voltage
VEBO
5
V
Collector – Emitter Breakdown Voltage
5013
5014
5015
BVCEO
300
400
450
V
Peak Collector Current
IC
0.5
A
Peak Base Current
IB
250
mA
Total Device Dissipation @ TC = 100 C
Derate above 100 C
PD
2.0
20
W
mW/C
Operating and Storage Temperature
TOP, TSTG
-65 to +200
C
Thermal Resistance, Junction to Case
RθJC
50
C/W
Notes:
TO-39
TO-5
1/ For ordering information, price, operating curves, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, maximum ratings/electrical characteristics at 25°C.
4/ Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%
相关PDF资料 |
PDF描述 |
|---|---|
| 2N50135TXV | 500 mA, 800 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N501439S | 500 mA, 900 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 2N50145 | 500 mA, 900 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N5015/39S | 500 mA, 450 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 2N5015/39 | 500 mA, 450 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5015JANTXV | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 0.2A 3-Pin TO-5 |
| 2N5015S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NPN |
| 2N5015SX | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:HIGH VOLTAGE SILICON EPITAXIAL NPN TRANSISTOR |
| 2N5015X | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 1KV V(BR)CEO | 500MA I(C) | TO-39 |
| 2N5016 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:silicon transistors UHF/VHF power transistors |
发布紧急采购，3分钟左右您将得到回复。