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参数资料
| 型号： | 2N50155 |
| 厂商： | SOLID STATE DEVICES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 1000 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 封装： | TO-5, 6 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 125K |
| 代理商： | 2N50155 |
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0043D
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
2N5013 thru 2N5015
SFT5013/5 thru SFT5015/5
Case Outline: TO-39
PIN 1: EMITTER
PIN 2: BASE
PIN 3: COLLECTOR
Case Outline: TO-5
PIN 1: EMITTER
PIN 2: BASE
PIN 3: COLLECTOR
Electrical Characteristic
3/
Symbol
Min
Max
Units
Collector – Emitter Breakdown Voltage
(IC = 200 ADC, RBE = 1 K)
5013
5014
5015
BVCER
800
900
1000
––
V
Collector–Base Breakdown Voltage
(IC = 200 ADC)
5013
5014
5015
BVCBO
800
900
1000
––
V
Emitter–Base Breakdown Voltage
(IE = 50 ADC)
BVEBO
5
––
V
Collector Cutoff Current
(VCB = 650 V)
(VCB = 700 V)
(VCB = 760 V)
(VCB = 650 V, TC = 100°C)
(VCB = 700 V, TC = 100°C)
(VCB = 760 V, TC = 100°C)
5013
5014
5015
5013
5014
5015
ICBO
––
12
100
Adc
Emitter Cutoff Current
(VEB= 4V)
IEBO
—
20
A
DC Current Gain
4/
(IC = 5 mADC, VCE = 10 VDC)
(IC = 20 mADC, VCE = 10 VDC)
hFE
10
30
180
––
Collector – Emitter Saturation Voltage
4/
(IC = 20 mADC, IB = 5 mADC)
5013
5014
5015
VCE(Sat)
––
1.6
1.8
Vdc
Base – Emitter Saturation Voltage
4/
(IC = 20 mADC, IB = 5 mADC)
VBE(Sat)
––
1.0
Vdc
Current Gain Bandwidth Product
(IC = 20 mADC, VCE = 10 VDC, f = 20 MHz)
fT
20
––
MHz
Output Capacitance
(VCB = 10 VDC, IE = 0 ADC, f = 1.0 MHz)
Cob
––
30
pF
Delay Time
Rise Time
Storage Time
Fall Time
VCC= 125 VDC,
IC= 100 mADC,
IB1= 20 mADC,
IB2= 20 mADC
td
tr
ts
tf
––
200
1200
3000
800
nsec
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相关代理商/技术参数 |
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| 2N5015JANTXV | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 0.2A 3-Pin TO-5 |
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