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参数资料
| 型号： | 2N501A |
| 厂商： | AMERICAN MICROSEMICONDUCTOR INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 50 mA, 12 V, PNP, Ge, SMALL SIGNAL TRANSISTOR, TO-1 |
| 封装： | TO-1, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 235K |
| 代理商： | 2N501A |
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2N501A Availability
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2N501A Information
Category Transistors
2N501A Specifications
Military/High-Rel : N
V(BR)CEO (V) : 12в
V(BR)CBO (V) : 15
I(C) Max. (A) : 50m
Absolute Max. Power Diss. (W) : 60m
Maxim um Operating Tem p (шC) : 100х
I(CBO) Max. (A) : 25u
@V(CBO) (V) (Test Condition) : 15
h(FE) Min. Current gain. : 30
h(FE) Max. Current gain. :
@I(C) (A) (Test Condition) : 50m
@V(CE) (V) (Test Condition) : 0.5
h(fe) Min. SS Current gain. : 4.5В
@I(C) (A) (Test Condition) : 2.0m
@V(CE) (V) (Test Condition) : .50
@Freq. (Hz) (Test Condition) : 20M
f(T) Min. (Hz) Transition Freq :
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
C(obo) (Max) (F) : 3.0p
@V(CB) (V) (Test Condition) : 3.0
@Freq. (Hz) (Test Condition) : 4.0M
Package Style : TO-1
Mounting Style : T
Description :
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相关代理商/技术参数 |
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|---|---|
| 2N502 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | TO-9 |
| 2N5020 | 制造商:INTERFET 制造商全称:INTERFET 功能描述:P-Channel Silicon Junction Field-Effect Transistor |
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| 2N5022 | 制造商:Motorola Inc 功能描述: 制造商:Motorola Inc 功能描述:1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 制造商:SSS 功能描述:1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 2N5023 | 制造商:Motorola 功能描述:2N5023 MOT N7D4C |
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