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参数资料
| 型号： | 2N5031 |
| 厂商： | MICROSEMI CORP |
| 元件分类： | BIP RF Small Signal |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-72 |
| 文件页数： | 1/4页 |
| 文件大小： | 83K |
| 代理商： | 2N5031 |
MSC1303.PDF 10-25-99
2N5031
DESCRIPTION:
General Purpose small-signal, pre-driver, and driver, applications targeted for military and industrial
equipment.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25
°C)
Symbol
Parameter
Value
Unit
VCEO
Collector-Emitter Voltage
10
Vdc
VCBO
Collector-Base Voltage
15
Vdc
VEBO
Emitter-Base Voltage
3.0
Vdc
IC
Collector Current
20
mA
Thermal Data
P
D
Total Device Dissipation @ TA = 25C
Derate above 25C
200
1.14
mWatts
mW/ C
1
2
3
4
1. Emitter
2. Base
3. Collector
4. Case
TO-72
Features
Silicon NPN, To-72 packaged VHF/UHF Transistor
1.2 GHz Current-Gain Bandwidth Product @ 5mA IC
Maximum Unilateral Gain – 12 dB (typ) @ 400 MHz
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5032 | 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:BIPOLAR NPN UHF/MICROWAVE TRANSISTOR |
| 2N5033 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | P-CHANNEL | 20V V(BR)DSS | 3.5MA I(DSS) | TO-106VAR |
| 2N5038 | 功能描述:两极晶体管 - BJT 20A 90V 140W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5038 | 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-3 |
| 2N5038/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NPN Silicon Transistors |
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