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参数资料
| 型号： | 2N5070 |
| 厂商： | ADVANCED SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-60 |
| 封装： | TO-60, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 18K |
| 代理商： | 2N5070 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 200 mA
30
V
BVCER
IC = 200 mA
RBE = 5.0
40
V
ICEO
VCE = 30 V
5.0
mA
ICEV
VCE = 60 V
VBE = -1.5 V
VCE = 60 V
VBE = -1.5 V
TC = 150
OC
10
mA
ICBO
VCB = 60 V
10
mA
IEBO
VEB = 4.0 V
10
mA
hFE
VCE = 5.0 V
IC = 1.0 A
IC = 3.0 A
10
100
---
Cob
VCB = 30 V
f = 1.0 MHz
85
pF
ft
VCE = 15 V
IC = 1.0 A
f = 50 MHz
100
MHz
Pin
ηηηη
IMD
VCE = 28 V
Pout = 25 W(PEP)
Zg = 50
f1 = 30 MHz
f2 = 30.001 MHz
40
1.25
-30
W
%
dB
NPN SILICON RF POWER TRANSISTOR
2N5070
DESCRIPTION:
The
ASI 2N5070 is Designed for High
Power Linear Amplifier Application in the
2.0 to 75 MHz Range.
FEATURES INCLUDE:
Emitter Ballasted
Common Emitter Package
MAXIMUM RATINGS
IC
3.3 A
10 A (PEAK)
VCE
30 V
PDISS
70 W @ TC = 25
OC
TSTG
-65
OC to +200 OC
θθθθ
JC
2.5
OC/W
PACKAGE STYLE TO- 60
1 = EMITTER
2 = BASE
3 = COLLECTOR
CASE = EMITTER
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