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参数资料
| 型号： | 2N5087-T/R |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 50 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 3/3页 |
| 文件大小： | 52K |
| 代理商： | 2N5087-T/R |
LV23015T
No.A1352-3/17
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
AM characteristics
: fc = 1000kHz, fm = 1kHz, 30%mod
Detection output 1
VO1
23dB
μV, 12pin output
60
120
240
mVrms
Detection output 2
VO2
80dB
μV, 12pin output
220
330
440
mVrms
Signal to noise ratio 1
S/N1
23dB
μV, 12pin output
15
20
dB
Signal to noise ratio 2
S/N2
80dB
μV, 12pin output
47
54
dB
Total harmonic distortion
THD
80dB
μV, 12pin output
1.2
2.5
%
IF count sensitivity
IF-C
18pin (DO) output
16
26
36
dB
μV
Mute attenuation
Mute-Att
80dB
μV, 12pin output
54
65
dB
Current drain
FM tuner
ICCFM
No input at FM
25
35
45
mA
AM tuner
ICCAM
No input at AM
11
22
33
mA
PLL characteristics
Built-in return resistor
Rf
XIN
8
M
Ω
Built-in output resistor
Rd
XOUT
250
k
Ω
Hysteresis width
VHIS
CE, CL, DI
0.1Vreg2
V
Output high level voltage
VOH
PD ; IO = -1mA
Vreg2-1.0
V
BO1 ; IO = 1mA
0.25
V
VOL2
BO1 ; IO = 5mA
1.25
V
VOL3
DO ; IO = 1mA
0.25
V
Output low level voltage
VOL4
AOUT ; IO = 1mA, AIN = 2.0V
0.5
V
IIH1
CE, CL, DI ; VI = 6.0V
5.0
μA
IIH2
XIN ; VI = VDD
0.16
0.9
μA
Input high level current
IIH3
AIN ; VI = 6.0V
200
nA
IIL1
CE, CL, DI ; VI = 0V
5.0
μA
IIL2
XIN ; VI = 0V
0.16
0.9
μA
Input low level current
IIL3
AIN ; VI = 0V
200
nA
IOFF1
AOUT, BO1 ; VO = 10V
5.0
μA
Output off-leak current
IOFF2
DO ; VO = 6.0V
5.0
μA
Note : The reference value is calculated from more than one data and does not ensure conformance to the specifications. No data control by selection is
implemented.
Package Dimensions
unit : mm (typ)
3253B
SANYO : TSSOP36(275mil)
7.
6
5.
6
(0.5)
(1.
0)
9.75
0.
5
0.15
1
18
36
19
0.18
(0.63)
0.
08
1.
2max
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5088 | 功能描述:两极晶体管 - BJT NPN Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5088/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Amplifier Transistor NPN |
| 2N5088_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Amplifier Transistors NPN Silicon |
| 2N5088_12 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER |
| 2N5088_D11Z | 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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