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参数资料
| 型号： | 2N5089D27Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件页数： | 7/14页 |
| 文件大小： | 730K |
| 代理商： | 2N5089D27Z |
3
2N5088
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MMBT5088
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2N5089
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MMBT5089
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 100
A, VCE = 5.0 V
5088
5089
IC = 1.0 mA, VCE = 5.0 V
5088
5089
IC = 10 mA, VCE = 5.0 V*
5088
5089
300
400
350
450
300
400
900
1200
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
0.5
V
VBE(on)
Base-Emitter On Voltage
IC = 10 mA, VCE = 5.0 V
0.8
V
SMALL SIGNAL CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown
Voltage*
IC = 1.0 mA, IB = 0
5088
5089
30
25
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100
A, IE = 0
5088
5089
35
30
V
ICBO
Collector Cutoff Current
VCB = 20 V, IE = 0
5088
VCB = 15 V, IE = 0
5089
50
nA
IEBO
Emitter Cutoff Current
VEB = 3.0 V, IC = 0
VEB = 4.5 V, IC = 0
50
100
nA
Spice Model
NPN (Is=5.911f Xti=3 Eg=1.11 Vaf=62.37 Bf=1.122K Ne=1.394 Ise=5.911f Ikf=14.92m Xtb=1.5 Br=1.271 Nc=2
Isc=0 Ikr=0 Rc=1.61 Cjc=4.017p Mjc=.3174 Vjc=.75 Fc=.5 Cje=4.973p Mje=.4146 Vje=.75 Tr=4.673n Tf=821.7p
Itf=.35 Vtf=4 Xtf=7 Rb=10)
fT
Current Gain - Bandwidth Product
IC = 500
A,V
CE = 5.0 mA,
f = 20 MHz
50
MHz
Ccb
Collector-Base Capacitance
VCB = 5.0 V, IE = 0, f = 100 kHz
4.0
pF
Ceb
Emitter-Base Capacitance
VBE = 0.5 V, IC = 0, f = 100 kHz
10
pF
hfe
Small-Signal Current Gain
IC = 1.0 mA, VCE = 5.0 V, 5088
f = 1.0 kHz
5089
350
450
1400
1800
NF
Noise Figure
IC = 100
A, V
CE = 5.0 V,
5088
RS = 10 k
,
5089
f = 10 Hz to 15.7 kHz
3.0
2.0
dB
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
相关PDF资料 |
PDF描述 |
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| 2N5088 | 50 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N3704 | 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5088 | 50 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5088 | 50 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5089-J60Z | 100 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5089G | 功能描述:两极晶体管 - BJT 50mA 30V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5089G-T92-B | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER |
| 2N5089G-T92-K | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER |
| 2N5089G-T92-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER |
| 2N5089L-T92-B | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER |
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