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参数资料
| 型号： | 2N5089RLREG |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 50 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | PLASTIC, TO-226AA, 3 PIN |
| 文件页数： | 12/24页 |
| 文件大小： | 417K |
| 代理商： | 2N5089RLREG |
2N5088 2N5089
2–48
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 Adc, VCE = 5.0 Vdc)
2N5088
2N5089
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
2N5088
2N5089
(IC = 10 mAdc, VCE = 5.0 Vdc)(2)
2N5088
2N5089
hFE
300
400
350
450
300
400
900
1200
—
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
VCE(sat)
—
0.5
Vdc
Base – Emitter On Voltage
(IC = 10 mAdc, VCE = 5.0 Vdc)(2)
VBE(on)
—
0.8
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 500 Adc, VCE = 5.0 Vdc, f = 20 MHz)
fT
50
—
MHz
Collector–Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Ccb
—
4.0
pF
Emitter–Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Ceb
—
10
pF
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
2N5088
2N5089
hfe
350
450
1400
1800
—
Noise Figure
(IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k,
2N5088
f = 1.0 kHz)
2N5089
NF
—
3.0
2.0
dB
2. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2.0%.
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5089RLRM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| 2N5089TA | 功能描述:两极晶体管 - BJT NPN 25V 100mA HFE/12 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5089TA_Q | 功能描述:两极晶体管 - BJT NPN 25V 100mA HFE/12 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5089TAR | 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5089TAR_Q | 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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