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参数资料
| 型号： | 2N5114 |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | 小信号晶体管 |
| 英文描述： | P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-206AA |
| 封装： | TO-18, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 33K |
| 代理商： | 2N5114 |
2N5114JAN/JANTX/JANTXV Series
Vishay Siliconix
Document Number: 70261
S-04030—Rev. E, 04-Jun-01
www.vishay.com
9-1
P-Channel JFETs
2N5114JAN/JANTX/JANTXV
2N5115JAN/JANTX/JANTXV
2N5116JAN/JANTX/JANTXV
PRODUCT SUMMARY
Part Number
VGS(off) (V)
rDS(on) Max (W)
ID(off) Typ (pA)
tON Max (ns)
2N5114
5 to 10
75
–10
16
2N5115
3 to 6
100
–10
30
2N5116
1 to 4
150
–10
42
FEATURES
BENEFITS
APPLICATIONS
D Low On-Resistance: 2N5114 <75 W
D Fast Switching—tON: 16 ns
D High Off-Isolation—ID(off): –10 pA
D Low Capacitance: 6 pF
D Low Insertion Loss
D Low Error Voltage
D High-Speed Analog Circuit Performance
D Negligible “Off-Error,” Excellent Accuracy
D Good Frequency Response
D Eliminates Additional Buffering
D Analog Switches
D Choppers
D Sample-and-Hold
D Normally “On” Switches
D Current Limiters
DESCRIPTION
The
2N5114JAN/JANTX/JANTXV
series
consists
of
p-channel JFET analog switches designed to provide low
on-resistance, good off-isolation, and fast switching. These
JFETs are optimized for use in complementary switching
applications with the Vishay Siliconix 2N4856A series.
TO-206AA
(TO-18)
S
D
Top View
G
Case
1
23
ABSOLUTE MAXIMUM RATINGS
Gate-Drain Voltage
30 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate-Source Voltage
30 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current
–50 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature
–65 to 200
_C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature
–55 to 200
_C
. . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.)
300
_C
. . . . . . . . . . . . . . . . . . .
Power Dissipationa
500 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a.
Derate 3 mW/
_C above 25_C
相关PDF资料 |
PDF描述 |
|---|---|
| 2N5116 | P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18 |
| 2N511B | 25 A, 45 V, PNP, Ge, POWER TRANSISTOR |
| 2N512B | 25 A, 45 V, PNP, Ge, POWER TRANSISTOR |
| 2N5139 | Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5147.MOD | 2000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5114_08 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:P-CHANNEL J-FET |
| 2N5114_TO-18 | 制造商:MICROSS 制造商全称:MICROSS 功能描述:P-CHANNEL JFET |
| 2N5114-16 | 制造商:CALOGIC 制造商全称:CALOGIC 功能描述:P-Channel JFET Switch |
| 2N5114-E3 | 功能描述:JFET 30V 10pA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5114JAN | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel JFETs |
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