参数资料
型号: 2N5115
厂商: AMERICAN MICROSEMICONDUCTOR INC
元件分类: 小信号晶体管
英文描述: P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18
封装: TO-18, 3 PIN
文件页数: 1/1页
文件大小: 235K
代理商: 2N5115
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2N5115 Information
Category Transistors
Class JFETs
2N5115 Specifications
Military/High-Rel : N
V(BR)DSS (V) :
V(BR)GSS (V) : 30
I(D) Max. (A) :
I(G) Max. (A) :
Absolute Max. Power Diss. (W) : 500m
Maxim um Operating Tem p (шC) : 200ю
I(GSS) Max. (A) : 500p
@V(GS) (V) (Test Condition) :
V(GS)off Min. (V) :
I(DSS) Max. (A) :
V(GS)off Max. (V) : 6.0
@Vgs (test) (V) :
@V(DS) (V) (Test Condition) :
@I(D) (A) (Test Condition) :
I(DSS) Min. (A) : 60m
I(DSS) Max. (A) :
@V(DS) (V) (Test Condition) :
r(DS)on Max. (Ohm s) : 100т
g(fs) Min. (S) Trans. conduct. :
g(fs) Max; (S) Trans. conduct; :
@V(DS) (V) (Test Condition) :
@I(D) (A) (Test Condition) :
C(iss) Max. (F) : 25p
@V(DS) (V) (Test Condition) :
Package Style : TO-18
Mounting Style : T
Description :
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相关代理商/技术参数
参数描述
2N5115_TO-18 制造商:MICROSS 制造商全称:MICROSS 功能描述:P-CHANNEL JFET
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2N5115-E3 功能描述:JFET 30V 10pA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流(Vgs=0 时的 Idss):50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
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