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| 型号： | 2N5153L |
| 厂商： | MICROSEMI CORP-LAWRENCE |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 封装： | TO-5, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 173K |
| 代理商： | 2N5153L |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/545
T4-LDS-0131 Rev. 1 (091476)
Page 1 of 4
DEVICES
LEVELS
2N5151
2N5153
JANSM – 3K Rads (Si)
2N5151L
2N5153L
JANSD – 10K Rads (Si)
2N5151U3
2N5153U3
JANSP – 30K Rads (Si)
JANSL – 50K Rads (Si)
JANSR – 100K Rads (Si)
JANSF – 300K Rads (Si)
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
80
Vdc
Collector-Base Voltage
VCBO
100
Vdc
Emitter-Base Voltage
VEBO
5.5
Vdc
Collector Current
IC
2.0
Adc
Total Power Dissipation
2N5151, 2N5153, L
2N5151U3, 2N5153U3
@ TA = +25°C
(1)
@ TC = +25°C
(2)
@ TA = +25°C
(3)
@ TC = +25°C
(4)
PT
1.0
10
1.16
100
W
Operating & Storage Junction Temperature Range
TJ , Tstg
-65 to +200
°C
Thermal Resistance, Junction-to Case
RθJC
10
1.75 (U3)
°C/W
Note:
1)
Derate linearly 5.7mW/°C for TA > +25°
2)
Derate linearly 66.7mW/°C for TA > +25°
3)
Derate linearly 6.63mW/°C for TA > +25°
4)
Derate linearly 571mW/°C for TA > +25°
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 100mAdc, IB = 0
V(BR)CEO
80
Vdc
Emitter-Base Cutoff Current
VEB = 4.0Vdc, IC = 0
VEB = 5.5Vdc, IC = 0
IEBO
1.0
Adc
mAdc
Collector-Emitter Cutoff Current
VCE = 60Vdc, VBE = 0
VCE = 100Vdc, VBE = 0
ICES
1.0
Adc
mAdc
Collector-Base Cutoff Current
VCE = 40Vdc, IB = 0
ICEO
50
Adc
TO-5
2N5151L, 2N5153L
(See Figure 1)
TO-39 (TO-205AD)
2N5151, 2N5153
U-3
2N5151U3, 2N5153U3
相关PDF资料 |
PDF描述 |
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| 2N5153 | Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 2N5153 | 2000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 2N5154JANJ | 2000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 2N5154JANS | 2000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 2N5154JAN | 2000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5153L_02 | 制造商:SEMICOA 制造商全称:SEMICOA 功能描述:Silicon PNP Transistor |
| 2N5153LJANSF | 制造商:Microsemi Corporation 功能描述: |
| 2N5153S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-39 |
| 2N5153SMD | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed |
| 2N5153SMD05 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:PNP |
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