参数资料
型号: 2N5189
厂商: AMERICAN MICROSEMICONDUCTOR INC
元件分类: 小信号晶体管
英文描述: 2000 mA, 55 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5
封装: TO-5, 3 PIN
文件页数: 1/1页
文件大小: 236K
代理商: 2N5189
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2N5189 Availability
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2N5189 Information
Category Transistors
2N5189 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 55в
V(BR)CBO (V) : 60
I(C) Max. (A) : 2.0
Absolute Max. Power Diss. (W) : 800m
Maxim um Operating Tem p (шC) : 175ю
I(CBO) Max. (A) : 100u
@V(CBO) (V) (Test Condition) :
V(CE)sat Max. (V) :
@I(C) (A) (Test Condition) :
@I(B) (A) (Test Condition) :
h(FE) Min. Current gain. : 15
h(FE) Max. Current gain. :
@I(C) (A) (Test Condition) : 1.0
@V(CE) (V) (Test Condition) : 1.0
f(T) Min. (Hz) Transition Freq :
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
C(obo) (Max) (F) :
@V(CB) (V) (Test Condition) :
@Freq. (Hz) (Test Condition) :
Package Style : TO-5
Mounting Style : T
Description :
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2N519 制造商:ETCO 功能描述:
2N5190 功能描述:TRANSISTOR NPN 40V 4A TO-225AA RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)(最大):1A 电压 - 集电极发射极击穿(最大):30V Ib、Ic条件下的Vce饱和度(最大):200mV @ 100mA,1A 电流 - 集电极截止(最大):100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR
2N5190G 功能描述:两极晶体管 - BJT BIP NPN 4A 40V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2N5191 功能描述:两极晶体管 - BJT NPN Power Switching RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2N5191 制造商:UNBRANDED 功能描述:TRANSISTOR, NPN TO-126