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参数资料
| 型号： | 2N5194 |
| 厂商： | AMERICAN MICROSEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 封装： | TO-126, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 235K |
| 代理商： | 2N5194 |
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2N5194 Information
Category Transistors
2N5194 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 60
V(BR)CBO (V) : 60
I(C) Max. (A) : 4.0
Absolute Max. Power Diss. (W) : 40
Maxim um Operating Tem p (шC) : 140х
I(CBO) Max. (A) : 100u
@V(CBO) (V) (Test Condition) :
V(CE)sat Max. (V) :
@I(C) (A) (Test Condition) :
@I(B) (A) (Test Condition) :
h(FE) Min. Current gain. : 25
h(FE) Max. Current gain. : 100
@I(C) (A) (Test Condition) : 1.5
@V(CE) (V) (Test Condition) : 2.0
f(T) Min. (Hz) Transition Freq : 2.0M
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
t(d) Max. (s) Delay tim e. :
t(r) Max. (s) Rise tim e :
t(on) Max. (s) On tim e. :
t(s) Max. (s) Storage tim e. :
t(f) Max. (s) Fall tim e. :
t(off) Max. (s) Off tim e :
Package Style : TO-126var
Mounting Style : T
Description :
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5194/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Silicon PNP Power Transistors |
| 2N5194_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Silicon PNP Power Transistors |
| 2N5194G | 功能描述:两极晶体管 - BJT 4A 60V 40W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5194G | 制造商:ON Semiconductor 功能描述:RF Bipolar Transistor |
| 2N5195 | 功能描述:两极晶体管 - BJT PNP Power Switching RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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