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参数资料
| 型号： | 2N5237JX |
| 厂商： | SEMICOA CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 10000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 封装： | HERMETIC SEALED, METAL CAN-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 412K |
| 代理商： | 2N5237JX |
Rev. F
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N5237
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500 Appendix E
JAN level (2N5237J)
JANTX level (2N5237JX)
JANTXV level (2N5237JV)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
General purpose
Low power, High voltage
NPN silicon transistor
Features
Hermetically sealed TO-5 metal can
Also available in chip configuration
Chip geometry 3111
Reference document:
MIL-PRF-19500/394
Benefits
Qualification Levels: JAN, JANTX, and
JANTXV
Radiation testing available
Absolute Maximum Ratings
TC = 25°C unless otherwise specified
Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
120
Volts
Collector-Base Voltage
VCBO
150
Volts
Emitter-Base Voltage
VEBO
10
Volts
Collector Current, Continuous
IC
10
A
Power Dissipation, TA = 25°C
Derate linearly above 25
°C
PT
1
5.7
W
mW/
°C
Power Dissipation, TC = 25°C
Derate linearly above 100
°C
PT
5
50
W
mW/
°C
Thermal Resistance
RθJA
RθJC
.175
.020
°C/W
Operating Junction Temperature
Storage Temperature
TJ
TSTG
-65 to +200
°C
Semicoa Corporation
Copyright
2010
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| 2N5239 | 制造商:LPT 功能描述:5961-00-190-7040 制造商:Solid State Devices Inc (SSDI) 功能描述:Silicon Transistor NPN TO-3 High Voltage |
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