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参数资料
| 型号： | 2N5338X-JQR-BR1 |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 5000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 文件页数： | 1/2页 |
| 文件大小： | 22K |
| 代理商： | 2N5338X-JQR-BR1 |
DESCRIPTION
The 2N5338X & 2N5339X silicon
expitaxial planar NPN transistor in jedec
TO-39 metal case intended for use as
drivers for high power transistors in
general purpose, amplifier and
switching circuit
ABSOLUTE MAXIMUM RATINGS TCASE = 25°c unless otherwise stated
2N5338X
2N5339X
LAB
SEME
Document Number 2674
Issue: 2
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
NPN SILICON
TRANSISTORS
VCBO
Collector – Base Voltage(IE = 0)
VCEO
Collector – Emitter Voltage (IB = 0)
VEBO
Emitter – Base Voltage (IC = 0)
IC
Collector Current
ICM
Collector Peak Current
IB
Base Current
Ptot
Total Dissipation at Tcase ≤ 25°C
Tamb ≤ 25°C
Tstg
Storage Temperature Range
Tj
Junction temperature
100V
6V
5A
7A
1A
6W
1W
–65 to +200°C
200°C
MECHANICAL DATA
Dimensions in mm (inches)
0.89
(0.035)
max.
12.70
(0.500)
min.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
45°
6.10 (0.240)
6.60 (0.260)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
1
2
3
0.66 (0.026)
1.14 (0.045)
TO-39
Pin 1 – Emitter
Pin 2 – Base
Pin 3 – Collector
相关PDF资料 |
PDF描述 |
|---|---|
| 2N5338X-JQR-A | 5000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 2N5338X-JQR | 5000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 2N5338X-JQR-B | 5000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 2N5339X-JQR-A | 5000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 2N5338X-JQRR1 | 5000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5339 | 功能描述:两极晶体管 - BJT NPN High Current RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5339_02 | 制造商:SEMICOA 制造商全称:SEMICOA 功能描述:Silicon NPN Transistor |
| 2N5339_1 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:NPN POWER SILICON SWITCHING TRANSISTOR |
| 2N5339JANTX | 制造商:Microsemi Corporation 功能描述: |
| 2N5339LCC4 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:BJT |
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