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参数资料
| 型号： | 2N5366D26Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件页数： | 1/3页 |
| 文件大小： | 25K |
| 代理商： | 2N5366D26Z |
2001 Fairchild Semiconductor Corporation
Rev. A, December 2001
2N53
66
TO-92
1
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
Thermal Characteristics T
A=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
40
V
VEBO
Emitter-Base Voltage
4.0
V
IC
Collector current
- Continuous
500
mA
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ +150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
VCBO
Collector-Base Breakdown Voltage
IC = 10A40
V
VCEO
Collector-Emitter Breakdown Voltage
IC = 10mA
40
V
VEBO
Emitter-Base Breakdown Voltage
IC = 10A4.0
V
ICBO
Collector Cut-off Current
VCB = 40V
100
nA
ICES
Collector Cut-off Current
VCB = 40V
100
nA
IEBO
Emitter Cut-off Current
VEB = 4.0V
10
A
hFE
DC Current Gain
VCE = 10V, IC = 2.0mA
VCE = 1.0V, IC = 50mA
VCE = 5.0V, IC = 300mA
80
100
40
300
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 50mA, IB = 2.5mA
IC = 300mA, IB = 30mA
0.25
1.0
V
VBE(sat)
Collector-Emitter Saturation Voltage
IC = 50mA, IB = 2.5mA
IC = 300mA, IB = 30mA
1.1
2.0
VBE(on)
Base-Emitter On Voltage
VCE = 10V, IC = 2.0mA
0.5
0.8
V
Cob
Output Capacitance
VCB = 10V, f = 1MHz
8.0
pF
Cib
Input Capacitance
VCB = 0.5V, f = 1MHz
35
pF
hfe
Small-Signal Current Gain
VCE = 10V, IC = 2.0mA, f = 1MHz
80
450
Symbol
Parameter
Max.
Units
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
mW
mW/
°C
RθJA
Thermal Resistance, Junction to Ambient
200
°C/W
2N5366
PNP General Purpose Amplifier
This device is designed for general purpose amplifiers applications at
collector currents to 300mA.
Sourced from process 68.
1. Emitter 2. Collector 3. Base
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5367 | 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:SPRINGFIELD, NEW JERSEY 07091 |
| 2N5367(R) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:PNP SILICON PLANAR TRANSISTOR |
| 2N5368 | 制造商:MICRO-ELECTRONICS 制造商全称:Micro Electronics 功能描述:COMPLEMENTARY SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES |
| 2N5369 | 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:SPRINGFIELD, NEW JERSEY 07091 |
| 2N5369RLRA | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:JFET Chopper Transistors |
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