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参数资料
| 型号： | 2N5398 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-72 |
| 文件页数： | 1/1页 |
| 文件大小： | 91K |
| 代理商： | 2N5398 |
01/99
2N5397, 2N5398
N-Channel Silicon Junction Field-Effect Transistor
Low-Noise
High Power Gain
High Transconductance
Mixers
Oscillators
VHF Amplifiers
Absolute maximum ratings at TA = 25C
Reverse Gate Source & Reverse Gate Drain Voltage
– 25 V
Drain Source Voltage
25 V
Continuous Forward Gate Current
10 mA
Continuous Device Power Dissipation
300 mW
Power Derating
1.7 mW/°C
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
Surface Mount
SMP5397, SMP5398
At 25°C free air temperature:
2N5397
2N5398
Static Electrical Characteristics
Min
Max
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V(BR)GSS
– 25
V
IG = – 1 A, VDS = V
Gate Source Forward Voltage
VGS(F)
11
V
IG = 1 mA, VDS = V
Gate Reverse Current
IGSS
– 0.1
nA
VGS = – 15V, VDS = V
– 0.1
A
VGS = – 15V, VDS = V
TA = 150°C
Gate Source Cutoff Voltage
VGS(OFF)
– 1– 6– 1– 6
V
VDS = 10V, ID = 1 nA
Drain Saturation Current (Pulsed)
IDSS
10
30
5
40
mA
VDS = 10V, VGS = V
Dynamic Electrical Characteristics
Common Source
gfs
5.5
9
5
10
mS
VDG = 10V, ID = 10 mA
f = 450 MHz
Forward Transconductance
Common Source
| Yfs |
6
10
5.5
10
mS
VDS = 10V, ID = 10 mA
f = 1 kHz
Forward Transfer Admittance
Common Source Output Conductance
| gos |
0.4
0.5
mS
VDG = 10V, ID = 10 mA
f = 450 MHz
Common Source Input Admittance
| Yos |
0.2
0.4
mS
VDS = 10V, ID = 10 mA
f = 1 kHz
Common Source Input Conductance
gis
23
mS
VDG = 10V, ID = 10 mA
f = 450 MHz
Common Source Input Capacitance
Ciss
5
5.5
pF
VDG = 15V, VGS = V
f = 1 kHz
Common Source
Crss
1.2
1.3
pF
VDG = 15V, VGS = V
f = 1 kHz
Reverse Transfer Capacitance
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
Databook.fxp
1/13/99 2:09 PM
Page B-20
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