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参数资料
| 型号： | 2N5401L34Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件页数： | 1/12页 |
| 文件大小： | 708K |
| 代理商： | 2N5401L34Z |
PNP General Purpose Amplifier
This device is designed as a general purpose amplifier and switch
for applications requiring high voltages.
MMBT5401
2N5401
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
150
V
VCBO
Collector-Base Voltage
160
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current - Continuous
600
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
TA = 25°C unless otherwise noted
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Symbol
Characteristic
Max
Units
2N5401
*MMBT5401
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
350
2.8
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
357
°C/W
C
B
E
TO-92
C
B
E
SOT-23
Mark: 2L
2001 Fairchild Semiconductor Corporation
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
2N5401
/
MMBT5401
2N5401/MMBT5401, Rev A
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相关代理商/技术参数 |
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| 2N5401L-A-AB3-B | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE SWITCHING TRANSISTOR |
| 2N5401L-A-AB3-K | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE SWITCHING TRANSISTOR |
| 2N5401L-A-AB3-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE SWITCHING TRANSISTOR |
| 2N5401L-A-T92-B | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE SWITCHING TRANSISTOR |
| 2N5401L-A-T92-K | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE SWITCHING TRANSISTOR |
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