- 您现在的位置：买卖IC网 > PDF目录30443 > 2N5401T/R (NXP SEMICONDUCTORS) 300 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 PDF资料下载
参数资料
| 型号： | 2N5401T/R |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | PLASTIC, SC-43A, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 52K |
| 代理商： | 2N5401T/R |
2004 Oct 28
2
Philips Semiconductors
Product specication
PNP high-voltage transistor
2N5401
FEATURES
Low current (max. 300 mA)
High voltage (max. 150 V).
APPLICATIONS
General purpose switching and amplification
Telephony applications.
DESCRIPTION
PNP high-voltage transistor in a TO-92; SOT54 plastic
package. NPN complement: 2N5551.
PINNING
PIN
DESCRIPTION
1
collector
2
base
3
emitter
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
handbook, halfpage1
3
2
MAM280
1
2
3
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
2N5401
SC-43A
plastic single-ended leaded (through hole) package; 3 leads
SOT54
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
160
V
VCEO
collector-emitter voltage
open base
150
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
300
mA
ICM
peak collector current
600
mA
IBM
peak base current
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
630
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
ambient temperature
65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
note 1
200
K/W
相关PDF资料 |
PDF描述 |
|---|---|
| 2N5401,116 | 300 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5401,412 | 300 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5401TPE2 | 600 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5401TPE1 | 600 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5401 | Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5401-X-AB3-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE SWITCHING TRANSISTOR |
| 2N5401-X-T92-B | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE SWITCHING TRANSISTOR |
| 2N5401-X-T92-K | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE SWITCHING TRANSISTOR |
| 2N5401YBU | 功能描述:两极晶体管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5401YIUTA | 功能描述:功率放大器 TO-92 RoHS:否 制造商:TriQuint Semiconductor 封装 / 箱体: 工作电源电压:28 V 电源电流:2.5 A 工作温度范围: 封装: |
发布紧急采购，3分钟左右您将得到回复。