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参数资料
| 型号： | 2N5405R1 |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 5000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 封装： | TO-5, 3 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 52K |
| 代理商： | 2N5405R1 |
Parameter
Test Conditions
Min.
Typ.
Max. Unit
VCE =BVCEO VBE = 1.5V
TC = 150°C
IC = –100mA IB = 0
VCE = – 50V
IC = 0
VEB = – 4V
IC = 0
IC = – 2A
VCE = – 5V
IC = – 2A
VCE = – 5V
IC = – 2A
IB = – 0.2A
IC = – 2A
IB = – 0.2A
VCB = – 10V
f = 1MHz
VCE = – 5V
IC = – 0.2A
IC = – 2A
IB1 = – IB2 = 0.2A
IC = – 2A
IB1 = – IB2 = 0.2A
IC = – 2A
IB1 = – IB2 = 2A
IC = –2A
IB1 = – IB2 = 2A
IC = –2A
IB1 = – IB2 = 2A
2N5404
2N5405
2N5406
2N5407
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Document Number 3075
Issue 1
– 10
– 500
–80
–100
–1
20
60
40
120
–0.6
–1.2
150
40
0.5
0.75
1
0.2
0.3
ICEX
VCEO(SUS)
ICEO
IEBO
hFE
VCE(SAT)
VBE(SAT)
COBO
ft
tr
ts
tf
Collector Cut-Off Current
Collector-Emitter Sustaining Voltage
With Base Open
Collector Cut-Off Current
Common Emitter, Small-Signal Value
of the Short-Circuit Forward Current
Transfer Ratio (f = 1KHz)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Base Capacitance
Transistion Frequency
Rise Time
Storage time
Fall Time
A
V
A
–
V
pf
MHz
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
* Pulse test : Pulse Width < 300
s ,Duty Cycle < 2%
2N5404
2N5406
2N5405
2N5407
2N5404
2N5405
2N5404
2N5405
2N5404
2N5405
2N5406
2N5407
2N5406
2N5407
2N5406
2N5407
DYNAMIC CHARACTERISTICS
相关PDF资料 |
PDF描述 |
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| 2N5407.MODR1 | 5000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N5407X | 5000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 2N5407X-QR-B | 5000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 2N5407XR1 | 5000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 2N5410.MOD | 5 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-111 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5406 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 80V 5A 3PIN TO-5 - Bulk |
| 2N5407 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 100V 5A 3PIN TO-5 - Bulk |
| 2N5407L | 制造商:未知厂家 制造商全称:未知厂家 功能描述:PNP |
| 2N5407X | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 5A I(C) | TO-39 |
| 2N5408 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 80V 5A 3PIN TO-111 - Bulk |
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