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参数资料
| 型号： | 2N5415 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 文件页数： | 2/2页 |
| 文件大小： | 31K |
| 代理商： | 2N5415 |
6 Lake Street, Lawrence, MA 01841
03/98 REV: E
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 2 of 2
VCB = 350 Vdc
2N5416
2N5415, 2N5416 JAN, SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
IC = 50 mAdc, VCE = 10 Vdc
IC = 1.0 mAdc, VCE = 10 Vdc
hFE
30
15
120
Collector-Emitter Saturation Voltage
IC = 50 mAdc, IB = 5.0 mAdc
VCE(sat)
2.0
Vdc
Base-Emitter Voltage
IC = 50 mAdc, VCE = 10 Vdc
VBE
1.5
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short Circuit
Forward
Current Transfer Ratio
IC = 10 mAdc, VCE = 10 Vdc, f = 5.0 MHz
h
fe
3.0
15
Forward Current Transfer Ratio
IC = 5.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz
hfe
25
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cobo
15
pF
Input Capacitance
VEB = 5.0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cibo
75
pF
SWITCHING CHARACTERISTICS
Turn-On Time
VCC =200 Vdc, IC = 50 mAdc, IB1= 5.0 mAdc
ton
1.0
s
Turn-Off Time
VCC = 200 Vdc, IC = 50 mAdc, IB1 = IB2 = 5.0 mAdc
toff
10
s
SAFE OPERATING AREA
DC Tests
TC = +25
0C; 1 Cycle; t = 0.4 s
Test 1
VCE = 10 Vdc, IC = 1.0 Adc
Test 2
VCE = 100 Vdc, IC = 100 mAdc
Test 3
VCE = 200 Vdc, IC = 24 mAdc
2N5415
Test 4
VCE = 300 Vdc, IC = 10 mAdc
2N5416
(3) Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5415 | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR |
| 2N5415_00 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:SILICON PNP TRANSISTORS |
| 2N5415CSM4 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:SILICON PLANAR EPITAXIAL PNP TRANSISTOR |
| 2N5415CSM4_11 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:SILICON PLANAR EPITAXIAL PNP TRANSISTOR |
| 2N5415JANTXV | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 200V 1A 3-Pin TO-5 |
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