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参数资料
| 型号： | 2N5433 |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | 小信号晶体管 |
| 英文描述： | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-206AC |
| 封装： | HERMETIC SEALED, TO-52, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 51K |
| 代理商： | 2N5433 |
2N5432/5433/5434
Vishay Siliconix
www.vishay.com
7-2
Document Number: 70245
S-04028—Rev. F, 04-Jun-01
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N5432
2N5433
2N5434
Parameter
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V(BR)GSS
IG = –1 mA , VDS = 0 V
–32
–25
V
Gate-Source Cutoff Voltage
VGS(off)
VDS = 5 V, ID = 3 nA
–4
–10
–3
–9
–1
–4
V
Saturation Drain Currentb
IDSS
VDS = 15 V, VGS = 0 V
150
100
30
mA
VGS = –15 V, VDS = 0 V
–5
–200
pA
Gate Reverse Current
IGSS
TA = 150_C
–10
–200
nA
Gate Operating Currentc
IG
VDG = 10 V, ID = 10 mA
–10
VDS = 5 V, VGS = –10 V
10
200
pA
Drain Cutoff Current
ID(off)
TA = 150_C
20
200
nA
Drain-Source On-Voltage
VDS(on)
50
70
100
mV
Drain-Source On-Resistance
rDS(on)
VGS = 0 V, ID = 10 mA
2
5
7
10
W
Gate-Source Forward Voltagec
VGS(F)
IG = 1 mA , VDS = 0 V
0.7
V
Dynamic
Common-Source
Forward Transconductancec
gfs
VDS = 5 V, ID = 10 mA
17
mS
Common-Source
Output Conductancec
gos
VDS = 5 V, ID = 10 mA
f = 1 kHz
600
mS
Drain-Source On-Resistance
rds(on)
VGS = 0 V, ID = 0 mA
f = 1 kHz
5
7
10
W
Common-Source
Input Capacitance
Ciss
VDS = 0 V, VGS = –10 V
20
30
Common-Source
Reverse Transfer Capacitance
Crss
VDS = 0 V, VGS = –10 V
f = 1 MHz
11
15
pF
Equivalent Input
Noise Voltagec
en
VDS = 5 V, ID = 10 mA
f = 1 kHz
3.5
nV
√Hz
Switching
td(on)
2
4
Turn-On Timeb
tr
VDD = 1.5 V, VGS(H) = 0 V
0.5
1
b
td(off)
VDD = 1.5 V, VGS(H) = 0 V
See Switching Circuit
4
6
ns
Turn-Off Timeb
tf
18
30
Notes
a.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
NIP
b.
Pulse test: PW
v300 ms duty cycle v3%.
c.
This parameter not registered with JEDEC.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5433-2 | 制造商:Vishay Siliconix 功能描述:TRANS JFET N-CH 3PIN TO-52 - Bulk |
| 2N5433-DIE | 制造商:Vishay Siliconix 功能描述: |
| 2N5433-E3 | 功能描述:JFET 25V 10pA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5434 | 功能描述:JFET 25V 10pA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5434-2 | 功能描述:JFET FIELD EFFECT TRANS RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
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