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参数资料
| 型号： | 2N5434 |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | 小信号晶体管 |
| 英文描述： | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-206AC |
| 封装： | HERMETIC SEALED, TO-52, 3 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 51K |
| 代理商： | 2N5434 |
2N5432/5433/5434
Vishay Siliconix
www.vishay.com
7-4
Document Number: 70245
S-04028—Rev. F, 04-Jun-01
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
50
20
10
0
1
10
100
40
30
On-Resistance vs. Drain Current
ID – Drain Current (mA)
TA = 25_C
VGS(off) = –2 V
–4 V
–8 V
40
–55
25
125
32
24
16
8
0
–15
85
–35
5
45
65
105
On-Resistance vs. Temperature
TA – Temperature (_C)
VGS(off) = –2 V
–4 V
–8 V
ID = 10 mA
rDS changes X 0.7%/
_C
100
0
–12
–16
–8
–4
–20
40
20
0
80
60
Capacitance vs. Gate-Source Voltage
Capacitance
(pF)
VGS – Gate-Source Voltage (V)
VDS = 0 V
f = 1 MHz
Ciss
Crss
Gate Leakage Current
048
12
1 pA
10 pA
100 pA
1 nA
10 nA
16
20
100 nA
VDG – Drain-Gate Voltage (V)
IGSS @ 125
_C
TA = 125_C
TA = 25_C
5 mA
IGSS @ 25
_C
10 mA
1 mA
100
10
1
10
100
1 k
100 k
10 k
Noise Voltage vs. Frequency
f – Frequency (Hz)
VDS = 5 V
ID = 10 mA
ID = 40 mA
100
10
1
10
100
Transconductance vs. Drain Current
ID – Drain Current (mA)
VDS = 5 V
f = 1 kHz
TA = –55_C
125
_C
VGS(off) = –4 V
ID = 10 mA
5 mA
1 mA
25
_C
e
n
–
Noise
V
oltage
nV
/
Hz
r DS
(on)
–
Drain-Source
On-Resistance
(
)
g
fs
–
Forward
T
ransconductance
(mS)
r DS
(on)
–
Drain-Source
On-Resistance
(
)
I G
–
Gate
Leakage
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5434-2 | 功能描述:JFET FIELD EFFECT TRANS RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5434-E3 | 功能描述:JFET 25V 10pA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5434-E3 | 制造商:Vishay Siliconix 功能描述:TRANSISTORS - JFET |
| 2N5435 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 60A I(C) | TO-3 |
| 2N5436 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 90V V(BR)CEO | 60A I(C) | TO-3 |
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