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参数资料
| 型号： | 2N5459D74Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 文件页数： | 1/12页 |
| 文件大小： | 783K |
| 代理商： | 2N5459D74Z |
G
D
S
2N5457
2N5458
2N5459
MMBF5457
MMBF5458
MMBF5459
N-Channel General Purpose Amplifier
This device is a low level audio amplifier and switching transistors,
and can be used for analog switching applications. Sourced from
Process 55.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VDG
Drain-Gate Voltage
25
V
VGS
Gate-Source Voltage
- 25
V
IGF
Forward Gate Current
10
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
TA = 25°C unless otherwise noted
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
G
S
D
TO-92
SOT-23
Mark: 6D / 61S / 6L
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
NOTE: Source & Drain
are interchangeable
2N5457
/
5458
/
5459
/
MMBF5457
/
5458
/
5459
Symbol
Characteristic
Max
Units
2N5457-5459
*MMBF5457-5459
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
350
2.8
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
125
°C/W
RθJA
Thermal Resistance, Junction to Ambient
357
556
°C/W
相关PDF资料 |
PDF描述 |
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| 2N5458D74Z | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2N5458RL1 | 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2N5458ZL1 | 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2N5457RL1 | 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2N5457RLRA | 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N546 | 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:NPN SWITCHING TRANSISTORS |
| 2N5460 | 功能描述:JFET P-Ch Junc FET RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5460/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:JFET Amplifier P-Channel |
| 2N5460_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:JFET Amplifier P−Channel − Depletion |
| 2N5460_D27Z | 功能描述:JFET P-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
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