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参数资料
| 型号： | 2N5460 |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | 小信号晶体管 |
| 英文描述： | P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-226AA |
| 封装： | PLASTIC, TO-92, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 66K |
| 代理商： | 2N5460 |
2N/SST5460 Series
Vishay Siliconix
Document Number: 70262
S-04030—Rev. D, 04-Jun-01
www.vishay.com
9-1
P-Channel JFETs
2N5460
SST5460
2N5461
SST5461
2N5462
SST5462
PRODUCT SUMMARY
Part Number
VGS(off) (V)
V(BR)GSS Min (V)
gfs Min (mS)
IDSS Min (mA)
2N/SST5460
0.75 to 6
40
1
–1
2N/SST5461
1 to 7.5
40
1.5
–2
2N/SST5462
1.8 to 9
40
2
–4
FEATURES
BENEFITS
APPLICATIONS
D High Input Impedance
D Very Low Noise
D High Gain: AV = 80 @ 20 mA
D Low Capacitance: 1.2 pF Typical
D Low Signal Loss/System Error
D High System Sensitivity
D High-Quality Low-Level Signal
Amplification
D Low-Current, Low-Voltage Amplifiers
D High-Side Switching
D Ultrahigh Input Impedance
Pre-Amplifiers
DESCRIPTION
The 2N/SST5460 series are p-channel JFETs designed to
provide all-around performance in a wide range of amplifier
and analog switch applications.
The 2N series, TO-226AA (TO-92), and SST series, TO-236
(SOT-23), plastic packages provide low cost options, and are
available in tape-and-reel for automated assembly, (see
Packaging Information).
TO-226AA
(TO-92)
Top View
S
G
D
1
2
3
D
S
G
TO-236
(SOT-23)
2
3
1
SST5460 (B0)*
SST5461 (B1)*
SST5462 (B2)*
*Marking Code for TO-236
Top View
2N5460
2N5461
2N5462
ABSOLUTE MAXIMUM RATINGS
Gate-Drain Voltage
40 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate-Source Voltage
40 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current
–10 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature
–65 to 150
_C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature
–55 to 150
_C
. . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.)
300
_C
. . . . . . . . . . . . . . . . . . .
Power Dissipationa
350 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a.
Derate 2.8 mW/
_C above 25_C
相关PDF资料 |
PDF描述 |
|---|---|
| 2N5461-E3 | P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-226AA |
| 2N5461/D81Z | P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2N3820/J05Z | P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2N3820/D81Z | P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2N5457/D11Z | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5460/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:JFET Amplifier P-Channel |
| 2N5460_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:JFET Amplifier P−Channel − Depletion |
| 2N5460_D27Z | 功能描述:JFET P-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5460_D74Z | 功能描述:JFET P-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5460_D75Z | 功能描述:JFET P-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
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