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参数资料
| 型号： | 2N5460RL |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 封装： | CASE 29-11, TO-226AA, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 154K |
| 代理商： | 2N5460RL |
JFET Amplifiers
P–Channel — Depletion
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Gate Voltage
VDG
40
Vdc
Reverse Gate–Source Voltage
VGSR
40
Vdc
Forward Gate Current
IG(f)
10
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
350
2.8
mW
mW/
°C
Junction Temperature Range
TJ
–65 to +135
°C
Storage Channel Temperature Range
Tstg
–65 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(IG = 10 Adc, VDS = 0)
2N5460, 2N5461, 2N5462
V(BR)GSS
40
—
Vdc
Gate Reverse Current
(VGS = 20 Vdc, VDS = 0)
2N5460, 2N5461, 2N5462
(VGS = 30 Vdc, VDS = 0)
(VGS = 20 Vdc, VDS = 0, TA = 100°C)
2N5460, 2N5461, 2N5462
(VGS = 30 Vdc, VDS = 0, TA = 100°C)
IGSS
—
5.0
1.0
nAdc
Adc
Gate–Source Cutoff Voltage
2N5460
(VDS = 15 Vdc, ID = 1.0 Adc)
2N5461
2N5462
VGS(off)
0.75
1.0
1.8
—
6.0
7.5
9.0
Vdc
Gate–Source Voltage
(VDS = 15 Vdc, ID = 0.1 mAdc)
2N5460
(VDS = 15 Vdc, ID = 0.2 mAdc)
2N5461
(VDS = 15 Vdc, ID = 0.4 mAdc)
2N5462
VGS
0.5
0.8
1.5
—
4.0
4.5
6.0
Vdc
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 2
72
Publication Order Number:
2N5460/D
2N5460
2N5461
2N5462
CASE 29–11, STYLE 7
TO–92 (TO–226AA)
1
2
3
2 DRAIN
1 SOURCE
3
GATE
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5460THRU2N5462 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:JFET Amplifiers - P-Channel - Depletion |
| 2N5461 | 功能描述:JFET P-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5461 | 制造商:Fairchild Semiconductor Corporation 功能描述:JFET |
| 2N5461_D26Z | 功能描述:JFET P-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5461_D74Z | 功能描述:JFET P-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
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