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参数资料
| 型号： | 2N5484D27Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92 |
| 文件页数： | 7/14页 |
| 文件大小： | 754K |
| 代理商： | 2N5484D27Z |
5
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
ON CHARACTERISTICS
V(BR)GSS
Gate-Source Breakdown Voltage
IG = - 1.0
A, VDS = 0
- 25
V
IGSS
Gate Reverse Current
VGS = - 20 V, VDS = 0
VGS= - 20 V, VDS= 0, TA= 100
°C
- 1.0
- 0.2
nA
A
VGS(off)
Gate-Source Cutoff Voltage
VDS = 15 V, ID = 10 nA
5484
5485
5486
- 0.3
- 0.5
- 2.0
- 3.0
- 4.0
- 6.0
V
IDSS
Zero-Gate Voltage Drain Current*
VDS = 15 V, VGS = 0
5484
5485
5486
1.0
4.0
8.0
5.0
10
20
mA
SMALL SIGNAL CHARACTERISTICS
gfs
Forward Transfer Conductance
VDS = 15 V, VGS = 0, f = 1.0 kHz
5484
5485
5486
3000
3500
4000
6000
7000
8000
mhos
Re(yis)
Input Conductance
VDS = 15 V, VGS = 0, f = 100 MHz
5484
VDS = 15 V, VGS = 0, f = 400 MHz
5485 / 5486
100
1000
mhos
gos
Output Conductance
VDS = 15 V, VGS = 0, f = 1.0 kHz
5484
5485
5486
50
60
75
mhos
Re(yos)
Output Conductance
VDS = 15 V, VGS = 0, f = 100 MHz
5484
VDS = 15 V, VGS = 0, f = 400 MHz
5485 / 5486
75
100
mhos
Re(yfs)
Forward Transconductance
VDS = 15 V, VGS = 0, f = 100 MHz
5484
VDS = 15 V, VGS = 0, f = 400 MHz
5485
5486
2500
3000
3500
mhos
Ciss
Input Capacitance
VDS = 15 V, VGS = 0, f = 1.0 MHz
5.0
pF
Crss
Reverse Transfer Capacitance
VDS = 15 V, VGS = 0, f = 1.0 MHz
1.0
pF
Coss
Output Capacitance
VDS = 15 V, VGS = 0, f = 1.0 MHz
2.0
pF
NF
Noise Figure
VDS= 15 V, RG = 1.0 k
,
f = 100 MHz
5484
VDS= 15 V, RG = 1.0 k
,
f = 400 MHz
5484
VDS= 15 V , RG = 1.0 k
,
f = 100 MHz
5485 / 5486
VDS= 15 V, RG = 1.0 k
,
f = 400 MHz
5485 / 5486
4.0
3.0
2.0
4.0
dB
*Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%
2N5484
/
5485
/
5486
/
MMBF5484
/
5485
/
5486
N-Channel RF Amplifier
(continued)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5484-E3 | 功能描述:JFET 25V 1mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5485 | 功能描述:JFET N-Chan JFET RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5485_D26Z | 功能描述:射频JFET晶体管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:N-Channel 正向跨导 gFS（最大值/最小值）: 电阻汲极/源极 RDS（导通）: 漏源电压 VDS:40 V 闸/源截止电压:5 V 闸/源击穿电压:40 V 最大漏极/栅极电压:40 V 漏极电流（Vgs=0 时的 Idss）:25 mA to 75 mA 漏极连续电流: 功率耗散:250 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 封装:Reel |
| 2N5485_D26Z_Q | 功能描述:射频JFET晶体管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:N-Channel 正向跨导 gFS（最大值/最小值）: 电阻汲极/源极 RDS（导通）: 漏源电压 VDS:40 V 闸/源截止电压:5 V 闸/源击穿电压:40 V 最大漏极/栅极电压:40 V 漏极电流（Vgs=0 时的 Idss）:25 mA to 75 mA 漏极连续电流: 功率耗散:250 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 封装:Reel |
| 2N5485_D27Z | 功能描述:射频JFET晶体管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:N-Channel 正向跨导 gFS（最大值/最小值）: 电阻汲极/源极 RDS（导通）: 漏源电压 VDS:40 V 闸/源截止电压:5 V 闸/源击穿电压:40 V 最大漏极/栅极电压:40 V 漏极电流（Vgs=0 时的 Idss）:25 mA to 75 mA 漏极连续电流: 功率耗散:250 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 封装:Reel |
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