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| 型号： | 2N5486 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 146K |
| 描述： | IC JFET N-CH VHF/UHF 25V TO92 |
| 产品变化通告： | Discontinuation 30/Jun/2006 |
| 标准包装： | 1,000 |
| 晶体管类型： | N 通道 JFET |
| 额定电流： | 30mA |
| 电压 - 额定： | 25V |
| 封装/外壳： | TO-226-3、TO-92-3 标准主体 |
| 供应商设备封装： | TO-92-3 |
| 包装： | 散装 |
| 其它名称： | 2N5486OS |
2N5486
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Gate?Source Breakdown Voltage (IG
= ?1.0
Adc, VDS
= 0)
V(BR)GSS
?25
?
?
Vdc
Gate Reverse Current (VGS
= ?20 Vdc, V
DS
= 0)
(VGS
= ?20 Vdc, V
DS
= 0, T
A
= 100
°C)
IGSS
?
?
?
?
?1.0
?0.2
nAdc
Adc
Gate Source Cutoff Voltage (VDS
= 15 Vdc, I
D
= 10 nAdc)
VGS(off)
?2.0
?
?6.0
Vdc
ON CHARACTERISTICS
Zero?Gate Voltage Drain Current (VDS
= 15 Vdc, V
GS
= 0)
IDSS
8.0
?
20
mAdc
SMALL?SIGNAL CHARACTERISTICS
Forward Transfer Admittance (VDS
= 15 Vdc, V
GS
= 0, f = 1.0 kHz)
?yfs?
4000
?
8000
mhos
Input Admittance (VDS
= 15 Vdc, V
GS
= 0, f = 400 MHz)
Re(yis)
?
?
1000
mhos
Output Admittance (VDS
= 15 Vdc, V
GS
= 0, f = 1.0 kHz)
?yos?
?
?
75
mhos
Output Conductance (VDS
= 15 Vdc, V
GS
= 0, f = 400 MHz)
Re(yos)
?
?
100
mhos
Forward Transconductance (VDS
= 15 Vdc, V
GS
= 0, f = 400 MHz)
Re(yfs)
3500
?
?
mhos
Input Capacitance (VDS
= 15 Vdc, V
GS
= 0, f = 1.0 MHz)
Ciss
?
?
5.0
pF
Reverse Transfer Capacitance (VDS
= 15 Vdc, V
GS
= 0, f = 1.0 MHz)
Crss
?
?
1.0
pF
Output Capacitance (VDS
= 15 Vdc, V
GS
= 0, f = 1.0 MHz)
Coss
?
?
2.0
pF
f, FREQUENCY (MHz)
30
0.3
10
bis
@ I
DSS
f, FREQUENCY (MHz)
5.0
Figure 1. Input Admittance (yis) Figure 2. Reverse Transfer Admittance (yrs)
COMMON SOURCE CHARACTERISTICS ADMITTANCE PARAMETERS
(VDS
= 15 Vdc, T
channel
= 25
°C)
f, FREQUENCY (MHz)
20
f, FREQUENCY (MHz)
10
Figure 3. Forward Transadmittance (yfs) Figure 4. Output Admittance (yos)
g
is
, INPUT CONDUCTANCE (mmhos)
20
10
0.5
0.7
1.0
2.0
3.0
5.0
7.0
20 30 50 70 100 200 300
500 700
1000
b
is
, INPUT SUSCEPTANCE (mmhos)
g
fs
, FORWARD TRANSCONDUCTANCE (mmhos)
|b
fs
|, FORWARD SUSCEPTANCE (mmhos)
g
rs
, REVERSE TRANSADMITTANCE (mmhos)
b
rs
, REVERSE SUSCEPTANCE (mmhos)
0.2
10 20 30 50 70 100 200 300
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
g
os
, OUTPUT ADMITTANCE (mhos)
b
os
, OUTPUT SUSCEPTANCE (mhos)
3.0
0.05
10 20 30 50 70 100 200 300
0.07
0.1
0.2
0.3
0.7
0.5
1.0
2.0
500 700
1000
500 700
1000
0.01
10 20 30 50 70 100 200 300
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
500 700
1000
bis
@ 0.25 I
DSS
gis
@ I
DSS
gis
@ 0.25 I
DSS
brs
@ I
DSS
0.25 IDSS
grs
@ I
DSS, 0.25 IDSS
gfs
@ I
DSS
|bfs| @ IDSS
|bfs| @ 0.25 IDSS
bos
@ I
DSS
and 0.25 I
DSS
gos
@ I
DSS
gos
@ 0.25 I
DSS
gfs
@ 0.25 I
DSS
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5486 | 制造商:Fairchild Semiconductor Corporation 功能描述:JFET |
| 2N5486/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:JFET VHF/UHF Amplifiers |
| 2N5486_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:JFET VHF/UHF Amplifiers N−Channel - Depletion |
| 2N5486_D26Z | 功能描述:射频JFET晶体管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:N-Channel 正向跨导 gFS（最大值/最小值）: 电阻汲极/源极 RDS（导通）: 漏源电压 VDS:40 V 闸/源截止电压:5 V 闸/源击穿电压:40 V 最大漏极/栅极电压:40 V 漏极电流（Vgs=0 时的 Idss）:25 mA to 75 mA 漏极连续电流: 功率耗散:250 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 封装:Reel |
| 2N5486_D27Z | 功能描述:射频JFET晶体管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:N-Channel 正向跨导 gFS（最大值/最小值）: 电阻汲极/源极 RDS（导通）: 漏源电压 VDS:40 V 闸/源截止电压:5 V 闸/源击穿电压:40 V 最大漏极/栅极电压:40 V 漏极电流（Vgs=0 时的 Idss）:25 mA to 75 mA 漏极连续电流: 功率耗散:250 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 封装:Reel |
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