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参数资料
| 型号： | 2N5486 |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-226AA |
| 封装： | TO-92, 3 PIN |
| 文件页数： | 5/8页 |
| 文件大小： | 103K |
| 代理商： | 2N5486 |
2N/SST5484 Series
Vishay Siliconix
Document Number: 70246
S-50148—Rev. G, 24-Jan-05
www.vishay.com
5
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
VGS Gate-Source Voltage (V)
VGS Gate-Source Voltage (V)
Transfer Characteristics
VGS(off) = 2 V
TA = 55_C
125_C
Transfer Characteristics
TA = 55_C
125_C
VGS(off) = 3 V
25_C
VGS Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
VGS(off) = 2 V
TA = 55_C
125_C
25_C
VGS Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
TA = 55_C
125_C
25_C
VGS(off) = 3 V
ID Drain Current (mA)
On-Resistance vs. Drain Current
Circuit Voltage Gain vs. Drain Current
0.1
1
10
TA = 25_C
3 V
VGS(off) = 2 V
10
0.1
AV +
gfs RL
1 ) RLgos
Assume VDD = 15 V, VDS = 5 V
RL +
10 V
ID
VGS(off) = 2 V
3 V
10
0
8
6
4
2
0
2
0.4
0.8
1.2
1.6
300
0
240
180
120
60
10
0
8
6
4
2
0
3
0.6
1.2
1.8
2.4
10
0
8
6
4
2
0
2
0.4
0.8
1.2
1.6
10
0
8
6
4
2
0
3
0.6
1.2
1.8
2.4
100
0
80
60
40
20
VDS = 10 V
VDS = 10 V
VDS = 10 V
f = 1 kHz
VDS = 10 V
f = 1 kHz
1
25_C
r DS
(on)
Drain-Source
On-Resistance
(
)
g fs
Forward
T
ransconductance
(mS)
g fs
Forward
T
ransconductance
(mS)
I D
Drain
Current
(mA)
I D
Drain
Current
(mA)
A
V
oltage
Gain
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5486 | 制造商:Fairchild Semiconductor Corporation 功能描述:JFET |
| 2N5486/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:JFET VHF/UHF Amplifiers |
| 2N5486_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:JFET VHF/UHF Amplifiers N−Channel - Depletion |
| 2N5486_D26Z | 功能描述:射频JFET晶体管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:N-Channel 正向跨导 gFS（最大值/最小值）: 电阻汲极/源极 RDS（导通）: 漏源电压 VDS:40 V 闸/源截止电压:5 V 闸/源击穿电压:40 V 最大漏极/栅极电压:40 V 漏极电流（Vgs=0 时的 Idss）:25 mA to 75 mA 漏极连续电流: 功率耗散:250 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 封装:Reel |
| 2N5486_D27Z | 功能描述:射频JFET晶体管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:N-Channel 正向跨导 gFS（最大值/最小值）: 电阻汲极/源极 RDS（导通）: 漏源电压 VDS:40 V 闸/源截止电压:5 V 闸/源击穿电压:40 V 最大漏极/栅极电压:40 V 漏极电流（Vgs=0 时的 Idss）:25 mA to 75 mA 漏极连续电流: 功率耗散:250 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 封装:Reel |
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