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参数资料
| 型号： | 2N5551-BP |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 208K |
| 代理商： | 2N5551-BP |
2N5551
NPN General
Purpose Amplifier
Transistor
Features
This device is designed for general purpose high voltage amplifiers
and gas discharge display drivers.
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
160
V
VCBO
Collector-Base Voltage
180
V
VEBO
Emitter-Base Voltage
6.0
V
IC
Collector Current
600
mA
PC
Collector Power Dissipation
625
mW
TJ
Operating Junction Temperature
-55 to +150
OC
TSTG
Storage Temperature
-55 to +150
OC
Electrical Characteristics @ 25
OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Voltage*
(Ic=1.0mAdc, I B=0)
160
---
Vdc
V(BR)CBO
Collector-Base Voltage
(I C=100uAdc, IE=0)
180
---
Vdc
V(BR)EBO
Emitter-Base Voltage
(I E=10uAdc, IC=0)
6.0
---
Vdc
ICBO
Collector Cutoff Current
(V CB=35Vdc,IE=0)
(V CB=120Vdc, IE=0, TA=100
OC)
---
50
nAdc
uAdc
IEBO
Emitter Cutoff Current
(V EB=5.0Vdc, IC=0)
---
50
nAdc
ON CHARACTERISTICS
hFE
DC Current gain
(I C=1.0mAdc, VCE=5.0Vdc)
(I C=10mAdc, VCE=5.0Vdc)
(I C=50mAdc, VCE=5.0Vdc)
80
30
---
250
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=50mAdc, IB=5.0mAdc)
---
0.5
Vdc
VBE(sat)
Base- Emitter Voltage
(IB=5.0mAdc, IC=50mAdc)
---
1.0
Vdc
TO-92
AE
B
C
D
G
* Pulse Test: Pulse Width<300us, Duty Cycle<2.0%
omponents
20736 Marilla Street Chatsworth
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MCC
Revision: A
2011/01/01
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C
.550
.590
13.97
14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G
.0
96
.104
2.44
2.64
TM
Micro Commercial Components
x Marking:Type number
www.mccsemi.com
1 of 3
Lead Free Finish/Rohs Compliant ("P"Suffix designates
Compliant. See ordering information)
E
B
C
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5551-B-T92-B | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE SWITCHING TRANSISTOR |
| 2N5551-B-T92-K | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE SWITCHING TRANSISTOR |
| 2N5551-B-T92-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE SWITCHING TRANSISTOR |
| 2N5551BU | 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5551C | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE) |
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