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参数资料
| 型号： | 2N5551 |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 607K |
| 代理商： | 2N5551 |
2N5551
NPN General
Purpose Amplifier
Transistor
Features
This device is designed for general purpose high voltage amplifiers
and gas discharge display drivers.
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
160
V
VCBO
Collector-Base Voltage
180
V
VEBO
Emitter-Base Voltage
6.0
V
IC
Collector Current
600
mA
PC
Collector Power Dissipation
625
mW
TJ
Operating Junction Temperature
-55 to +150
OC
TSTG
Storage Temperature
-55 to +150
OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Voltage*
(Ic=1.0mAdc, I B=0)
160
---
Vdc
V(BR)CBO
Collector-Base Voltage
(I C=100uAdc, IE=0)
180
---
Vdc
V(BR)EBO
Emitter-Base Voltage
(I E=10uAdc, IC=0)
6.0
---
Vdc
ICBO
Collector Cutoff Current
(V CB=35Vdc,IE=0)
(V CB=120Vdc, IE=0, TA=100
OC)
---
50
nAdc
uAdc
IEBO
Emitter Cutoff Current
(V EB=5.0Vdc, IC=0)
---
50
nAdc
ON CHARACTERISTICS
hFE
DC Current gain
(I C=1.0mAdc, VCE=5.0Vdc)
(I C=10mAdc, VCE=5.0Vdc)
(I C=50mAdc, VCE=5.0Vdc)
80
30
---
250
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=50mAdc, IB=5.0mAdc)
---
0.5
Vdc
VBE(sat)
Base- Emitter Voltage
(IB=5.0mAdc, IC=50mAdc)
---
1.0
Vdc
TO-92
A
E
B
C
D
G
* Pulse Test: Pulse Width<300us, Duty Cycle<2.0%
omponents
20736 Marilla
Street Chatsworth
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MCC
Revision: 4
2006/05/14
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C
.550
.590
13.97
14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G
.010
.104
2.44
2.64
TM
Micro Commercial Components
E
B C
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Marking:Type number
www.mccsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5551 T/R | 功能描述:两极晶体管 - BJT TRANS HV TAPE WIDE PITCH RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5551,116 | 功能描述:两极晶体管 - BJT TRANS HV TAPE WIDE PITCH RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5551,412 | 功能描述:TRANSISTOR NPN 160V 300MA TO-92 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2N5551 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR NPN TO-92 |
| 2N5551_10 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE SWITCHING TRANSISTOR |
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