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参数资料
| 型号： | 2N5551CSMG4 |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | HERMETIC SEALED, CERAMIC, LCC1-3 |
| 文件页数： | 2/2页 |
| 文件大小： | 31K |
| 代理商： | 2N5551CSMG4 |
2N5551CSM
Document Number 6528
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
IC = 1.0mA
IB = 0mA
IC = 100μAIE = 0mA
IE = 10μAIC = 0mA
VCB = 120V
IE = 0
TA = +100°C
VEB = 4V
IC = 0
IC = 10mA
IB = 1.0mA
IC = 50mA
IB = 5mA
IC = 10mA
IB = 1.0mA
IC = 50mA
IB = 5mA
IC = 1.0mA
VCE = 5V
IC = 10mA
VCE = 5V
IC = 50mA
VCE = 5V
IC = 10mA
VCE = 10V
f = 100MHz
VCB = 10V
IE = 0
f = 1.0 MHz
VEB = 0.5V
IC = 0
f = 1.0 MHz
IC = 250μAVCE = 5V
RS=1.0 k
f = 1.0 KHz
VCE = 10V
IC =1.0 mA
f = 1.0 KHz
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
V(BR)CEO*
Collector – Emitter Breakdown Voltage
V(BR)CBO
Collector – Base Breakdown Voltage
V(BR)EBO
Emitter – Base Breakdown Voltage
ICBO
Collector – Base Cut-off Current
IEBO
Emitter – Base Cut-off Current
VCE(sat)
Collector – Emitter Saturation Voltage
VBE(sat)
Base – Emitter Saturation Voltage
hFE*
Current Gain
fT
Current Gain Bandwidth Product
Cobo
Output Capacitance
Cib
Input Capacitance
NF
Noise Figure
hFE*
Current Gain
160
180
6
50
0.15
0.20
1.0
80
250
30
100
300
6
20
8
50
200
V
nA
μA
nA
V
—
pF
dB
—
* Pulse Test: tp ≤ 300μs, δ≤ 2%.
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| 2N5551G-B-T92-K | 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5551-C-T92-B | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE SWITCHING TRANSISTOR |
| 2N5551-C-T92-K | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE SWITCHING TRANSISTOR |
| 2N5551-C-T92-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE SWITCHING TRANSISTOR |
| 2N5551CTA | 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5551CYTA | 功能描述:两极晶体管 - BJT NPN 160V 600mA HFE/250 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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