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参数资料
| 型号： | 2N5551ZL1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | PLASTIC, TO-226AA, 3 PIN |
| 文件页数： | 1/36页 |
| 文件大小： | 364K |
| 代理商： | 2N5551ZL1 |
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2–59
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
2N5550
2N5551
Unit
Collector – Emitter Voltage
VCEO
140
160
Vdc
Collector – Base Voltage
VCBO
160
180
Vdc
Emitter – Base Voltage
VEBO
6.0
Vdc
Collector Current — Continuous
IC
600
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.5
12
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
2N5550
2N5551
V(BR)CEO
140
160
—
Vdc
Collector – Base Breakdown Voltage
(IC = 100 Adc, IE = 0 )
2N5550
2N5551
V(BR)CBO
160
180
—
Vdc
Emitter – Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
V(BR)EBO
6.0
—
Vdc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
2N5550
(VCB = 120 Vdc, IE = 0)
2N5551
(VCB = 100 Vdc, IE = 0, TA = 100°C)
2N5550
(VCB = 120 Vdc, IE = 0, TA = 100°C)
2N5551
ICBO
—
100
50
100
50
nAdc
Adc
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
IEBO
—
50
nAdc
1. Pulse Test: Pulse Width = 300
ms, Duty Cycle = 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
2N5550
2N5551
*Motorola Preferred Device
*
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
COLLECTOR
3
2
BASE
1
EMITTER
相关PDF资料 |
PDF描述 |
|---|---|
| 2N5550RLRE | 600 mA, 140 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5550RLRM | 600 mA, 140 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5551 | 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N6426 | 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N2925 | 200 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5551ZL1G | 功能描述:两极晶体管 - BJT 600mA 180V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5552 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 80V 10A 3PIN TO-5 - Bulk |
| 2N5552-1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| 2N5555 | 功能描述:JFET N-CH 25V 15mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5555 | 制造商:Fairchild Semiconductor Corporation 功能描述:JFET |
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