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参数资料
| 型号： | 2N5630 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 16 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 文件页数： | 3/6页 |
| 文件大小： | 253K |
| 代理商： | 2N5630 |
2N5630 2N5631 2N6030 2N6031
3
Motorola Bipolar Power Transistor Device Data
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.02
0.5
0.2
0.1
0.05
0.02
0.05
r(t)
,EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
0.1
0.2
0.5
5.0
10
20
50
100
200
500
2000
1000
θJC(t) = r(t) θJC
θJC = 0.875°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.01
0.1
0.02
1.0
2.0
SINGLE PULSE
20
2.0
Figure 5. Active–Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
10
7.0
5.0
2.0
0.2
3.0
5.0 7.0
10
20
30
50
200
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
70
1.0
I C
,COLLECT
OR
CURRENT
(AMP)
CURVES APPLY BELOW
RATED VCEO
TJ = 200°C
dc
1.0 ms
0.7
0.5
0.3
2N5630, 2N6030
3.0
100
0.5 ms
50 ms
5.0 ms
2N5631, 2N6031
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 200_C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
t,
TIME
(
s)
PNP
2N6030, 2N6031
5.0
0.2
Figure 6. Turn–Off Time
IC, COLLECTOR CURRENT (AMP)
3.0
2.0
1.0
0.5
0.3
0.7 1.0
2.0
7.0
10
20
TJ = 25°C
IC/IB = 10
IB1 = IB2
VCE = 30 V
ts
5.0
0.7
0.5
3.0
NPN
2N5630, 2N5631
tf
4.0
0.2
IC, COLLECTOR CURRENT (AMP)
3.0
2.0
1.0
0.2
0.3
0.7
1.0
2.0
7.0
10
20
TJ = 25°C
IB1 = IB2
IC/IB = 10
VCE = 30 V
ts
5.0
0.4
0.5
3.0
tf
0.6
0.3
t,
TIME
(
s)
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6030 | 16 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 2N5631 | 16 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 2N5633.MOD | 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 2N5634LEADFREE | 10 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N5633LEADFREE | 10 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5631 | 功能描述:两极晶体管 - BJT 16A 140V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5631/D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High-Voltage High-Power Transistors |
| 2N5631G | 功能描述:两极晶体管 - BJT 16A 140V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5632 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 100V 10A 3PIN TO-3 - Bulk 制造商:Motorola Inc 功能描述: 制造商:Harris Corporation 功能描述: |
| 2N5633 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 120V 10A 3PIN TO-3 - Bulk |
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