参数资料
型号: 2N5639RLRA
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: 30 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
封装: CASE 29, 3 PIN
文件页数: 1/2页
文件大小: 119K
代理商: 2N5639RLRA
Semiconductor Components Industries, LLC, 2001
September, 2001 – Rev. 3
90
Publication Order Number:
2N5638/D
2N5638, 2N5639
2N5638 is a Preferred Device
JFET Chopper Transistors
N–Channel – Depletion
N–Channel Junction Field Effect Transistors, depletion mode (Type
A) designed for chopper and high–speed switching applications.
Low Drain–Source “ON” Resistance:
RDS(on) = 30
for 2N5638
RDS(on) = 60
for 2N5639
Low Reverse Transfer Capacitance
Crss = 4.0 pF (Max) @ f = 1.0 MHz
Fast Switching Characteristics
tr = 5.0 ns (Max) (2N5638)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDS
30
Vdc
Drain–Gate Voltage
VDG
30
Vdc
Reverse Gate–Source Voltage
VGSR
30
Vdc
Forward Gate Current
IGF
10
mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25
°C
PD
310
2.82
mW
mW/
°C
Storage Temperature Range
Tstg
–65 to +150
°C
Operating Junction Temp Range
TJ
–65 to +135
°C
INPUT
(SCOPE A)
OUTPUT
(SCOPE B)
PULSE
GENERATOR
VDD = 10 Vdc
0.1
mF
0.001
mF
50 Ohms
50
RL
+–
TO
50 OHM
SCOPE A
TO
50 OHM
SCOPE B
RL +
VDD
ID
* (RDS(on) ) 50)
50
1.0 k
SCOPE
TEKTRONIX 567A
OR EQUIVALENT
Figure 1. Switching Times Test Circuit
VGS(on)
VGS(off)
10%
90%
td(off)
tr
td(on)
tf
Device
Package
Shipping
ORDERING INFORMATION
2N5638RLRA
TO–92
TO–92
CASE 29
STYLE 5
2000/Tape & Reel
3
2
1
Preferred devices are recommended choices for future use
and best overall value.
2N5639
TO–92
5000/Box
2N5369RLRA
TO–92
2000/Tape & Reel
Y
= Year
WW
= Work Week
MARKING DIAGRAMS
2N
5638
YWW
2N
5639
YWW
http://onsemi.com
1 DRAIN
2 SOURCE
3
GATE
相关PDF资料
PDF描述
2N5639 30 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2N5640 30 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2N5640RLRM 30 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2N5640RLRE 30 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2N5640 30 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
相关代理商/技术参数
参数描述
2N5639RLRAG 功能描述:JFET 30V 10mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流(Vgs=0 时的 Idss):50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
2N5640 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:N-CHANNEL JFET
2N5641 制造商:未知厂家 制造商全称:未知厂家 功能描述:silicon transistors UHF/VHF power transistors
2N5642 制造商:ELCIND 功能描述:
2N5643 功能描述:射频双极电源晶体管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集电极/Base Gain hfe Min:40 最大工作频率:30 MHz 集电极—发射极最大电压 VCEO:25 V 发射极 - 基极电压 VEBO:4 V 集电极连续电流:20 A 最大直流电集电极电流: 功率耗散:250 W 封装 / 箱体:Case 211-11 封装:Tray