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参数资料
| 型号： | 2N5661 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 1 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-213AA |
| 文件页数： | 1/2页 |
| 文件大小： | 34K |
| 代理商： | 2N5661 |
6 Lake Street, Lawrence, MA 01841
3/98 REV:
B
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
MAXIMUM RATINGS
Ratings
Symbol
2N5660
2N5662
2N5661
2N5663
Units
Collector-Emitter Voltage
VCEO
200
300
Vdc
Collector-Base Voltage
VCBO
250
400
Vdc
Collector-Emitter Voltage
VCER
250
400
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
Base Current
IB
0.5
Adc
Collector Current
IC
2.0
Adc
2N5660
2N5661
2N5662
2N5663
Total Power Dissipation @ TA = 25
0C
@ TC = 100
0C
PT
2.0
(1)
20
(3)
1.2
(2)
15
(4)
W
Operating & Storage Junction
Temperature Range
TJ, Tstg
-65 to +200
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
2N5660
2N5661
2N5662
2N5663
Unit
Thermal Resistance, Junction-to-Case
Junction-to-Ambient
RθJC
RθJA
5.0
87.5
6.67
145.8
0C/W
1)
Derate linearly 11.4 mW/
0C for TA > 250C
2)
Derate linearly 6.9 mW/
0C for TA > 250C
3)
Derate linearly 200 mW/
0C for TC > 1000C
4)
Derate linearly 150 mW/
0C for TC > 1000C
ELECTRICAL CHARACTERISTICS (TC = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
2N5660, 2N5662
2N5661, 2N5663
V(BR)CEO
200
300
Vdc
Collector-Base Breakdown Voltage
IC = 10 mAdc, RBE = 100
2N5660, 2N5662
2N5661, 2N5663
V(BR)CER
250
400
Vdc
Emitter-Base Breakdown Voltage
IE = 10 Adc
V(BR)EBO
6.0
Vdc
TECHNICAL DATA
2N5660 JANTX, JTXV
2N5661 JANTX, JTXV
2N5662 JANTX, JTXV
2N5663 JANTX, JTXV
Processed per MIL-PRF-19500/454
NPN SILICON POWER TRANSISTOR
2N5660, 2N5661
TO-66 (TO-213AA)
2N5662, 2N5663
TO-5
MIL-PRF
QPL
DEVICES
相关PDF资料 |
PDF描述 |
|---|---|
| 2N5662 | 2 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-205AA |
| 2N5664SMD05-JQR-BR4 | 3 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-276AA |
| 2N5664SMD05-JQR-AR4 | 3 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-276AA |
| 2N5664SMDR4 | 3 A, 200 V, NPN, Si, POWER TRANSISTOR |
| 2N5664SMD05-JQR-A | 3 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-276AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5661JANTX | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 300V 2A 3-Pin(2+Tab) TO-66 |
| 2N5661U3 | 制造商:Microsemi Corporation 功能描述:2N5661U3 - Bulk |
| 2N5662 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 200V 2A 3PIN TO-5 - Bulk 制造商:Rochester Electronics LLC 功能描述:NPN TRANSISTOR TO-5 LAW - Bulk |
| 2N5663 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| 2N5663_10 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:SILICON POWER NPN TRANSISTOR |
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