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参数资料
| 型号： | 2N5661 |
| 厂商： | SEMICOA CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 封装： | HERMETIC SEALED, METAL CAN-2 |
| 文件页数： | 2/2页 |
| 文件大小： | 204K |
| 代理商： | 2N5661 |
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. D
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N5661
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 10 mA
300
Volts
Collector-Emitter Breakdown Voltage
V(BR)CER
IC = 10 mA, RBE = 100
400
Volts
Emitter-Base Breakdown Voltage
V(BR)EBO
IE = 10 A
6
Volts
Collector-Base Cutoff Current
ICBO1
ICBO2
VCB = 300 Volts
VCB = 400 Volts
0.1
1.0
A
mA
Collector-Emitter Cutoff Current
ICES1
ICES2
VCE = 300 Volts
VCE = 300 Volts, TA = 150°C
0.2
100
A
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
hFE5
IC = 50 mA, VCE = 2 Volts
IC = 500 mA, VCE = 5 Volts
IC = 1 A, VCE = 5 Volts
IC = 2 A, VCE = 5 Volts
IC = 500 mA, VCE = 5 Volts
TA = -55°C
25
15
5
10
75
Base-Emitter Saturation Voltage
VBEsat1
VBEsat2
IC = 1 A, IB = 100 mA
IC = 2 A, IB = 400 mA
1.2
1.5
Volts
Collector-Emitter Saturation Voltage
VCEsat1
VCEsat2
IC = 1 A, IB = 100 mA
IC = 2 A, IB = 400 mA
0.4
0.8
Volts
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|hFE|
VCE = 5 Volts, IC = 100 mA,
f = 10 MHz
2
7
Open Circuit Output Capacitance
COBO
VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
45
pF
Switching Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Saturated Turn-On Time
tON
IC = 500 mA, VCC = 100 Volts
250
ns
Saturated Turn-Off Time
tOFF
IC = 500 mA, VCC = 100 Volts
1200
ns
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相关代理商/技术参数 |
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