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参数资料
| 型号： | 2N5663R1 |
| 厂商： | SEMELAB LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 1 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-205AD |
| 封装： | HERMETIC SEALED, METAL, TO-39, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 11K |
| 代理商： | 2N5663R1 |
2N5663
Bipolar NPN Device.
V
CEO =
300V
I
C = 1A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO*
300
V
I
C(CONT)
1
A
h
FE
@ 5/0.5 (V
CE / IC)
25
75
-
f
t
20M
Hz
P
D
15
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
1-Aug-02
Bipolar NPN Device in a
Hermetically sealed TO39
Metal Package.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Dimensions in mm (inches).
0.89
(0.035)
max.
12.70
(0.500)
min.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
45°
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
1
2
3
0.74 (0.029)
1.14 (0.045)
TO39 (TO205AD)
PINOUTS
1 – Emitter
2 – Base
3 – Collector
相关PDF资料 |
PDF描述 |
|---|---|
| 2N5663 | 2 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-5 |
| 2N5661 | 2 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 2N5662 | Si, NPN, RF POWER TRANSISTOR, TO-5 |
| 2N5664R1 | 3 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-213AA |
| 2N5665SMD | 3 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-276AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5663SV | 制造商: 功能描述: |
| 2N5664 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 200V 5A 3PIN TO-66 - Bulk 制造商:SPC Multicomp 功能描述:BJT NPN 200V 5A TO-66 制造商:SPC Multicomp 功能描述:BJT, NPN, 200V, 5A, TO-66; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:200V; Power Dissipation Pd:52.5W; DC Collector Current:5A; DC Current Gain hFE:40; Operating Temperature Min:-65C; No. of Pins:3 |
| 2N5664_02 | 制造商:SEMICOA 制造商全称:SEMICOA 功能描述:Silicon NPN Transistor |
| 2N5664_1 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:NPN POWER SILICON SWITCHING TRANSISTOR |
| 2N5664SMD | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH REL APPLICATIONS |
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